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Projection optical system, exposure apparatus, and exposure method

A technology of projection optical system and imaging optics, which is applied in the direction of photolithography exposure device, microlithography exposure equipment, optics, etc., and can solve problems such as difficult correction of chromatic aberration and curvature of the image plane

Active Publication Date: 2008-07-09
NIKON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006]However, when this technology is applied to a normal refractive projection optical system, it is difficult to correct the chromatic aberration well and satisfy the Petzval (Petzval) condition And correct the curvature of the image plane well, and the problem that the enlargement of the optical system cannot be avoided
Furthermore, there is a problem that it is difficult to satisfactorily suppress the reflection loss on the optical surface and secure a large effective image-side numerical aperture.

Method used

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  • Projection optical system, exposure apparatus, and exposure method
  • Projection optical system, exposure apparatus, and exposure method
  • Projection optical system, exposure apparatus, and exposure method

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment

[0241] Fig. 5 shows the lens configuration of the projection optical system according to the first embodiment of this embodiment. 5, in the projection optical system PL related to the first embodiment, the first imaging optical system G1 is arranged in order from the grating side along the light traveling direction, so that the convex surface of the aspherical shape faces the wafer side biconvex lens L11, biconvex lens L12. The negative meniscus lens L13 with the concave surface of the aspherical shape facing the grating side, and the first concave mirror CM1. Furthermore, in the first imaging optical system G1, the reflecting surface of the second concave mirror CM2 for reflecting the light reflected by the first concave mirror CM1 and passing through the negative meniscus lens L13 to the second imaging optical system G2 , Is arranged in a region that does not include the optical axis AX between the lenticular lens L12 and the negative meniscus lens L13. Therefore, the lenticular...

no. 2 Embodiment

[0312] Fig. 7 shows the lens configuration of a projection optical system according to a second embodiment of this embodiment. 7, in the projection optical system PL of the second embodiment, the first imaging optical system G1 is arranged in order from the grating side along the light traveling direction, so that the convex surface of the aspherical shape faces the wafer side lenticular lens L11, lenticular lens L12. The negative meniscus lens L13 with the concave surface of the aspherical shape facing the grating side, and the first concave mirror CM1. Moreover, in the first imaging optical system G1, the reflecting surface of the second concave mirror CM2 for reflecting the light reflected by the first concave mirror CM1 and passing through the negative meniscus lens L13 to the second imaging optical system G2 , Is arranged on a region not including the optical axis AX between the lenticular lens L12 and the negative meniscus lens L13. Therefore, the lenticular lens L11 and the...

no. 3 Embodiment

[0414] (Zhu Yuan)

[0415] Image side NA: 1.20

[0416] Exposure area: A=14mm B=18mm

[0417] H=26.0mm C=4mm

[0418] Imaging magnification: 1 / 4 times

[0419] Center wavelength: 193.306nm

[0420] Quartz refractive index: 1.5603261

[0421] Refractive index of fluorite: 1.5014548

[0422] Liquid 1 refractive index: 1.43664

[0423] Quartz dispersion (dn / dλ): -1.591E-6 / pm

[0424] Fluorite dispersion (dn / dλ): -0.980E-6 / pm

[0425] Liquid 1 dispersion (dn / dλ): -2.6E-6 / pm

[0426] The corresponding value of the conditional expression Ma=374.65mm L=1400mm

[0427] (table 3)

[0428] (Optical components)

[0429] Radius of curvature (mm)

Surface spacing (mm)

Medium

Side 1

∞

50.0000

1：

∞

8.0000

Quartz glass

2：

∞

33.0000

3：

ASP1

25.0422

Quartz glass

4：

-163.93521

1.0000

5：

355.31617

60.7391

Quartz glass

6：

...

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Abstract

A catadioptric projection optical system for forming a reduced image of a first surface (R) on a second surface (W) is a relatively compact projection optical system having excellent imaging performance as well corrected for various aberrations, such as chromatic aberration and curvature of field, and being capable of securing a large effective image-side numerical aperture while suitably suppressing reflection loss on optical surfaces. The projection optical system comprises at least two reflecting mirrors (CM 1 , CM 2 ), and a boundary lens (Lb) whose surface on the first surface side has a positive refracting power, and an optical path between the boundary lens and the second surface is filled with a medium (Lm) having a refractive index larger than 1.1. Every transmitting member and every reflecting member with a refracting power forming the projection optical system are arranged along a single optical axis (AX) and the projection optical system has an effective imaging area of a predetermined shape not including the optical axis.

Description

[0001] This application is a divisional application with an application number of 200480012069.0, an application date of May 6, 2004, and the title of "Projection Optical System, Exposure Device, and Exposure Method". Technical field [0002] The present invention relates to a catadioptric projection optical system, exposure device and exposure method, in particular to a high-resolution exposure device suitable for use in the manufacture of semiconductor elements and liquid crystal display elements by photolithography process The catadioptric projection optical system. Background technique [0003] In the photolithography process used to manufacture semiconductor elements, etc., a pattern image of a mask (or grating) is passed through a projection optical system on a wafer (or glass plate, etc.) coated with photoresist, etc. Projection exposure device for exposure. In addition, with the increase in the degree of integration of semiconductor elements and the like, the resolution ca...

Claims

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Application Information

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IPC IPC(8): G02B17/08G03F7/20G02B13/14G02B13/18G02B13/24H01L21/027
CPCG02B17/0892G02B13/22G03F7/70225G02B17/0812G03F7/70275
Inventor 大村泰弘
Owner NIKON CORP
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