Low-temperature phase-change thermochromic film and preparation method thereof

A technology of thermochromic and low-temperature phase change, applied in the direction of coating, etc., can solve the problems of low stability and durability, insensitivity to temperature, and high phase transition temperature of thermochromic film, so as to reduce the phase transition temperature, The effect of high optical sensitivity and high absorption rate

Active Publication Date: 2022-05-20
江苏城乡建设职业学院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention provides a low-temperature phase-change thermochromic film in order to solve the technical problems of high phase transition temperature, low stability and durability, and insensitive temperature sensitivity of the prior art thermochromic film.

Method used

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  • Low-temperature phase-change thermochromic film and preparation method thereof
  • Low-temperature phase-change thermochromic film and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0035] Preparation method of low temperature phase change temperature discoloration film, comprising the following steps:

[0036] Step 1: After cleaning the high-quality float glass substrate with deionized water, plasma bombardment is carried out for 2min through Ar and Rf with a gas flow rate of 100sccm, and the power is 600W;

[0037] Step 2: The optical absorbent 2D conjugated dithiophene benzophene p-fluorobenzotriazole copolymer is sprayed on the glass substrate after plasma bombardment to obtain the substrate;

[0038] Step 3: Take Ar gas and O on the substrate in step 2 2 Gas as sputtering gas, silicon aluminum as the target, gas flow rate of 100:120sccm, using magnetron sputtering method to prepare the bottom layer, film thickness of 30nm;

[0039] Step 4: Hit the bottom layer in step 3 with Ar gas and O 2 Gas as sputtering gas, with high refractive index material as the target material, gas flow rate of 100:120sccm, using magnetron sputtering method to prepare the mediu...

Embodiment 2

[0046] Preparation method of low temperature phase change temperature discoloration film, comprising the following steps:

[0047] Step 1: After cleaning the high-quality float glass substrate with deionized water, plasma bombardment is carried out for 2min through Ar and Rf with a gas flow rate of 110sccm, and the power is 700W;

[0048] Step 2: The optical absorbent 2D conjugated dithiophene benzophene p-fluorobenzotriazole copolymer is sprayed on the glass substrate after plasma bombardment to obtain the substrate;

[0049] Step 3: Take Ar gas and O on the substrate in step 2 2 Gas as sputtering gas, silicon aluminum as the target, gas flow rate of 100:120sccm, using magnetron sputtering method to prepare the bottom layer, film thickness of 40nm;

[0050] Step 4: Hit the bottom layer in step 3 with Ar gas and O 2 Gas as sputtering gas, with high refractive index material as the target material, gas flow rate of 100:120sccm, using magnetron sputtering method to prepare the mediu...

Embodiment 3

[0057] Preparation method of low temperature phase change temperature discoloration film, comprising the following steps:

[0058] Step 1: After cleaning the high-quality float glass substrate with deionized water, plasma bombardment is carried out for 2min through Ar and Rf with a gas flow rate of 120sccm, with a power of 800W;

[0059] Step 2: The optical absorbent fullerene receptor is sprayed on the glass substrate after plasma bombardment to prepare the substrate;

[0060] Step 3: Take Ar gas and O on the substrate in step 2 2 Gas as sputtering gas, silicon aluminum as the target, gas flow rate of 100:120sccm, using magnetron sputtering method to prepare the bottom layer, film thickness of 35nm;

[0061] Step 4: Hit the bottom layer in step 3 with Ar gas and O 2 Gas as sputtering gas, with high refractive index material as the target material, gas flow rate of 100:120sccm, the use of magnetron sputtering method to prepare the medium film layer, film thickness of 35nm;

[0062]...

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Abstract

The invention provides a low-temperature phase-change thermochromic film which comprises a glass substrate, and a base layer, a dielectric film layer, a first doped film layer, a second doped film layer, a third doped film layer, a fourth doped film layer and a protective layer are sequentially arranged on the glass substrate. The low-temperature phase visible light transmittance is also improved; the optical absorbent is sprayed on the glass substrate, the conjugated structure of the optical absorbent improves the optical performance of the substrate, and meanwhile, the substrate has good electron enrichment and oxidation-reduction characteristics, so that the glass substrate is higher in adhesive force with a base coat, higher in optical sensitivity, high in long-wave-band light absorptivity and capable of absorbing long-wave-band light; the glass is used for promoting the glass to trigger the color change temperature and ensuring that light with short wavelength can penetrate through the glass, so that the temperature of the transmitted light is ensured, and the comfort in the using process is further ensured.

Description

Technical field [0001] The present invention is in the field of color-changing film technology, specifically relates to a low-temperature phase-varying color-changing film and a method for preparing it. Background [0002] Color-changing film according to its color-changing method can be divided into: temperature discoloration, photochromic discoloration, electrochromic discoloration, etc., wherein, thermochromic film does not require additional energy application, which as a functional film material, by changing the ambient temperature change to change the transmission or absorption of incident light, this new material, widely used in industry, textile, military, printing, health care, diagnostics, construction, anti-counterfeiting marks, daily decoration, aerospace and other fields, by more and more scholars and enterprises attention. [0003] Conventional thermochromic films, such as VO 2 The phase change temperature of the thin film is 68 ° C, which cannot meet the requiremen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/34C03C17/36
CPCC03C17/3649C03C17/3482C03C2218/156C03C2217/90
Inventor 林改刘德喜李晓波
Owner 江苏城乡建设职业学院
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