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Projection optical system, exposure apparatus, and exposure method

A technology of projection optical system and exposure device, which is applied in the direction of photolithography exposure device, microlithography exposure equipment, optics, etc., and can solve the problems that it is difficult to correct chromatic aberration and image surface curvature.

Active Publication Date: 2008-07-09
NIKON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006]However, when this technology is applied to a normal refractive projection optical system, it is difficult to correct the chromatic aberration well and satisfy the Petzval (Petzval) condition And correct the curvature of the image plane well, and the problem that the enlargement of the optical system cannot be avoided
Furthermore, there is a problem that it is difficult to satisfactorily suppress the reflection loss on the optical surface and secure a large effective image-side numerical aperture.

Method used

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  • Projection optical system, exposure apparatus, and exposure method
  • Projection optical system, exposure apparatus, and exposure method
  • Projection optical system, exposure apparatus, and exposure method

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment

[0241] FIG. 5 shows the lens configuration of the projection optical system according to the first example of this embodiment. Referring to FIG. 5 , in the projection optical system PL relating to the first embodiment, the first imaging optical system G1 is sequentially arranged from the grating side along the traveling direction of light to the lenticular lens L11 whose aspherical convex surface faces the wafer side, and the lenticular lens L12, a negative meniscus lens L13 with an aspherical concave surface facing the grating side, and a first concave mirror CM1. Furthermore, in the first imaging optical system G1, the reflective surface of the second concave mirror CM2 for reflecting the light reflected by the first concave mirror CM1 and passing through the negative meniscus lens L13 toward the second imaging optical system G2 , is disposed on a region not including the optical axis AX between the biconvex lens L12 and the negative meniscus lens L13. Therefore, the lentic...

no. 2 Embodiment

[0312] FIG. 7 shows the lens configuration of the projection optical system according to the second example of this embodiment. Referring to FIG. 7, in the projection optical system PL relating to the second embodiment, the first imaging optical system G1 is sequentially arranged from the grating side along the traveling direction of the light with the lenticular lens L11 having the aspheric convex surface facing the wafer side, and the lenticular lens L12, a negative meniscus lens L13 with an aspherical concave surface facing the grating side, and a first concave mirror CM1. Furthermore, in the first imaging optical system G1, the reflective surface of the second concave mirror CM2 for reflecting the light reflected by the first concave mirror CM1 and passing through the negative meniscus lens L13 toward the second imaging optical system G2 , is disposed on a region not including the optical axis AX between the biconvex lens L12 and the negative meniscus lens L13. Therefore,...

no. 3 Embodiment

[0414] (Zhu Yuan)

[0415] Image side NA: 1.20

[0416] Exposure area: A=14mm B=18mm

[0417] H=26.0mm C=4mm

[0418] Imaging magnification: 1 / 4 times

[0419] Center wavelength: 193.306nm

[0420] Refractive index of quartz: 1.5603261

[0421] Fluorite Refractive Index: 1.5014548

[0422] Liquid 1 Refractive Index: 1.43664

[0423] Quartz dispersion (dn / dλ): -1.591E-6 / pm

[0424] Fluorite dispersion (dn / dλ): -0.980E-6 / pm

[0425] Liquid 1 dispersion (dn / dλ): -2.6E-6 / pm

[0426] The corresponding value of the conditional expression Ma=374.65mm L=1400mm

[0427] (table 3)

[0428] (optical components)

[0429] Radius of curvature (mm)

Surface spacing (mm)

media

side 1

∞

50.0000

1：

∞

8.0000

Quartz glass

2：

∞

33.0000

3：

ASP1

25.0422

Quartz glass

4：

-163.93521

1.0000

5：

355.31617

60.7391

Quartz glass

...

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Abstract

A catadioptric projection optical system for forming a reduced image of a first surface (R) on a second surface (W) is a relatively compact projection optical system having excellent imaging performance as well corrected for various aberrations, such as chromatic aberration and curvature of field, and being capable of securing a large effective image-side numerical aperture while suitably suppressing reflection loss on optical surfaces. The projection optical system comprises at least two reflecting mirrors (CM 1 , CM 2 ), and a boundary lens (Lb) whose surface on the first surface side has a positive refracting power, and an optical path between the boundary lens and the second surface is filled with a medium (Lm) having a refractive index larger than 1.1. Every transmitting member and every reflecting member with a refracting power forming the projection optical system are arranged along a single optical axis (AX) and the projection optical system has an effective imaging area of a predetermined shape not including the optical axis.

Description

[0001] This application is a divisional application with the application number 200480012069.0, the filing date is May 6, 2004, and the name is "projection optical system, exposure device and exposure method". technical field [0002] The present invention relates to a catadioptric projection optical system, exposure device and exposure method, in particular to a high-resolution exposure device suitable for use in the manufacture of semiconductor elements and liquid crystal display elements, etc. A catadioptric projection optical system. Background technique [0003] In the photolithography process used to manufacture semiconductor elements, etc., a pattern image of a mask (or grating) is used to pass through a projection optical system on a wafer (or glass plate, etc.) coated with photoresist, etc. A projection exposure apparatus for exposure. Furthermore, as the degree of integration of semiconductor elements and the like increases, the resolution capability (resolution) ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G02B17/08G02B13/14G02B13/18G02B13/24H01L21/027
CPCG03F7/70275G02B17/0892G02B17/0812G03F7/70225G02B13/22
Inventor 大村泰弘
Owner NIKON CORP
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