Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A phase demodulation device and method for transducer of radio frequency matcher

A radio frequency matching and sensor technology, applied in measurement devices, instruments, semiconductor/solid-state device manufacturing, etc., can solve problems such as inability to obtain results, and achieve the effect of easy system implementation

Active Publication Date: 2008-07-09
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the asymmetry of the input waveform, the XOR gate itself produces an additional phase-difference output, so accurate results cannot be obtained

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A phase demodulation device and method for transducer of radio frequency matcher
  • A phase demodulation device and method for transducer of radio frequency matcher
  • A phase demodulation device and method for transducer of radio frequency matcher

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] A phase detection device and method of a sensor of a radio frequency matching device according to the present invention, such as Figure 7 As shown, it is applied in the sensor of the RF matching device, and is used to detect the phase of the RF load impedance through the RF main transmission line, and its specific implementation method is:

[0047] Such as Figure 7 As shown, the phase detection device of a sensor of a radio frequency matching device according to the present invention includes a signal processing sampling circuit, an edge-triggered frequency detection phase detector PFD and an amplification and filtering circuit. in,

[0048]The signal processing sampling circuit is used to obtain the voltage and current signals on the radio frequency transmission line, and process the collected sine wave voltage and current signals to output square wave signals to the edge-triggered phase frequency detector PFD; specifically, it includes XOR The gate processes the c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a phase detection device and a method of a sensor of a radio frequency matcher, and is applied in the sensor of the radio frequency matcher for detecting the phase of a radio frequency load impedance by a radio frequency main transmission line, the device includes a signal processing and sampling circuit, an edge trigger phase frequency detector PFD and an amplifier-filter circuit, wherein, the requirements of the edge trigger phase frequency detector PFD on the input signals are not strict, the invention neither requires the equal amplitudes of two input signals, nor requires the symmetrical square waves of the input signals, so the system is easier to be realized. Although the system is not complicated, the phase detection proposal can better detect the phase of the load impedance.

Description

technical field [0001] The invention relates to the technical field of detection and monitoring of semiconductor manufacturing equipment, in particular to a phase detection device and method for a sensor of a radio frequency matching device. Background technique [0002] Plasma is widely used in the production of semiconductor devices. In a plasma etch system, an RF power supply supplies power to the plasma chamber to generate the plasma. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. These active particles interact with the semiconductor wafer placed in the cavity and exposed to the plasma environment, making the semiconductor wafer material Various physical and chemical reactions occur on the surface, which changes the surface properties of the material and completes the etching process of the semiconductor wafer. [0003] The commonly used RF power supply has an operating frequency of 13.56MHz,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/00G01R27/02
Inventor 张文雯
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products