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Corrosive agent and corrosion method for II-VI family semiconductor material line defect display

A II-VI, semiconductor technology, applied in the field of etchant for dislocation display of mercury cadmium telluride epitaxial thin film materials and cadmium zinc telluride substrate bulk materials, it can solve the problems of irregular pit shape, masking of morphology features, and affecting appearance

Active Publication Date: 2008-07-16
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Disadvantages of Chen etchant: 1. The pit type is small, and the side length is about 1.5um, which can only be counted with an optical microscope at 1000 times; 2. The background "oxidation" is serious, which is not conducive to the identification of corrosion pits. The differential interference spectroprism (Normaski ) can enhance the contrast between the corrosion pit and the background, but the morphology features in the background will also be covered up, and the traces of water stains after corrosion will be exposed, which will affect the "beauty" of the observed corrosion pit image; 3. The dislocation corrosion pit of the corrosion sample is divided into Two categories: C1 and C2, see Yang Jianrong, Chen Xinqiang and He Li, SPIE, 4795, 76 (2002), Cao Xiuliang and Yang Jianrong, Chinese Laser & Infrared, 35, 45 (2005)
[0006] Disadvantages of Schaake etchant: 1. The pit type is very irregular and varies in size; 2. The corrosion pits are divided into two categories: S1 and S2
S1 is a very irregular pit shape with different sizes; S2 is a small dot in the background, its density has nothing to do with S1, and the general dislocation density is on the order of 1×10 4 / cm 2 to 1×10 7 / cm 2 Between, there is no relevant report in the generation mechanism literature about S2; 3, to Cd 1-y Zn y Te substrate is bright after corrosion, but no corrosion pits

Method used

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  • Corrosive agent and corrosion method for II-VI family semiconductor material line defect display
  • Corrosive agent and corrosion method for II-VI family semiconductor material line defect display
  • Corrosive agent and corrosion method for II-VI family semiconductor material line defect display

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Embodiment 1

[0033] The corroded sample is Zn 0.04 Cd 0.96 Hg in Liquid Phase Epitaxy Growth on Te Substrate 0.7 Cd 0.3 Te film material, showing Hg 0.7 CD 0.3 Dislocations in Te thin films. The ratio of corrosive agent is: H 2 O:HCl:HNO 3 : K 2 Cr 2 o7 :CrO 3 =80ml: 8ml: 12ml: 5.1g: 2.5g. At room temperature, the corroded sample was placed in a hollowed-out quartz hanging basket, and the hanging basket was immersed and raised in the above-mentioned etchant 4 times under manual control every 10 seconds, and the process continued for 2.5 minutes. See Fig. 4(a) and Fig. 4(b) dislocation corrosion diagrams, the crystal plane of the sample is (111) B plane, which belongs to the sample with low corrosion pit density. Since the corrosion pit density is on the order of 10 3 -10 4 / cm 2 Therefore, the corrosion pit density cannot be counted under the optical microscope at 1000X, but it can be counted at 200X, which greatly improves the reliability of the value, which cannot be achiev...

Embodiment 2

[0035] The corroded sample is Zn 0.04 CD 0.96 Hg in Liquid Phase Epitaxy Growth on Te Substrate 0.7 CD 0.3 Te film material, showing Hg 0.7 CD 0.3 Dislocations in Te thin films. The ratio of corrosive agent is: H 2 O:HCl:HNO 3 : K 2 Cr 2 o 7 :CrO 3 =80ml: 8ml: 12ml: 5.1g: 2.5g. At room temperature, the corroded sample was placed in a hollowed-out quartz hanging basket, and the hanging basket was immersed and raised in the above-mentioned etchant 4 times under manual control every 10 seconds, and the process continued for 2.5 minutes. See Figure 5 for the dislocation corrosion diagram, the sample is (111)B surface, which belongs to the high EPD sample, and its EPD=2.0×10 5 / cm 2 .

Embodiment 3

[0037] The corroded sample is Zn 0.04 CD 0.96 Hg in Liquid Phase Epitaxy Growth on Te Substrate 0.7 CD 0.3 Te film material, showing Hg 0.7 CD 0.3 Dislocations in Te film, cleavage plane (110) plane. The ratio of corrosive agent is: H 2 O:HCl:HNO 3 :HF:K 2 Cr 2 o 7 :CrO 3 =80ml: 8ml: 12ml: 5ml: 5.1g: 2.5g. At room temperature, the corroded sample was placed in a hollowed-out quartz hanging basket, and the quartz hanging basket was submerged and raised in the above-mentioned etchant 5 times under manual control every 10 seconds, and the process continued for 4 minutes. See Figure 6 for the dislocation corrosion diagram.

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Abstract

The invention discloses a corrosive agent which is used for showing the dislocation of II-VI group semiconductor materials and the corrosive agent is provided with the component ratio of 80ml: 6 to 10ml: 10 to 15ml: 0 to 5ml: 5.1g: 2.0 to 7.0g of H2O to HCl to HNO 3 to HF to K2Cr2O7 to CrO3; wherein, the II-VI group semiconductor materials are ZnyCd1-yTe materials and Hg1-xCdxTe thin film materials which develop by taking the ZnyCd1-yTe materials as the substrate extension; the corrosion method comprises the pretreatment of the eroded samples, the dislocation erosion and the post treatment of the eroded samples; compared with two present common Schaake and Chen corrosive agents specially used for showing the dislocation of the Hg1-xCdxTe thin film materials, the invention has the advantages of bigger shape of a corrosive pit and clear rules and background, and showing the dislocation corrosive pit of the substrate materials Cd1-yZnyTe, which has great significance in the study of the dislocation corresponding relations of the extension and the substrate.

Description

technical field [0001] The present invention relates to II-VI group semiconductor material, specifically refers to a kind of for mercury cadmium telluride (Hg 1-x Cd x Te) epitaxial thin film materials and cadmium zinc telluride (Cd 1-y Zn y Te) etchant and etching method for dislocation display of substrate bulk material. Background technique [0002] Hg 1-x Cd x Te is an extremely important infrared detection material, usually composed of Cd 1-y Zn y Epitaxial Hg on Te substrate 1-x Cd x Te film, so it is of great significance to study the dislocation density (EPD) of its material. Currently revealing Cd 1-y Zn y Te bulk material and Hg 1-x Cd x There are many kinds of etchants for the dislocation density of Te thin film materials. for Hg 1-x Cd x There are two commonly used etchants for Te thin film materials, one is: H 2 O:HCl:CrO 3 =5ml: 1ml: 1.67g, see H.F.Schaake, A.J.Lewis, Mater.Res.Soc.Symp.Proc.(USA) 14,301(1983); Another kind is: H 2 O:HCl:HNO ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F11/04
Inventor 赵守仁陆修来魏彦锋陈新强杨建荣丁瑞军何力
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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