LED and its making method

A technology of light-emitting diodes and manufacturing methods, which is applied to electrical components, circuits, semiconductor devices, etc., and can solve problems such as performance degradation of light-emitting elements, increase in density, and shortened life of light-emitting elements
CN101222008AInactive Publication Date: 2008-07-16EPISTAR CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
EPISTAR CORP
Publication Date
2008-07-16
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a light-emitting diode (LED) and the manufacturing method thereof. The light-emitting diode at least comprises a substrate, a reflection structure, a buffer layer and a light-emitting epitaxy structure. The reflection structure is arranged on one surface of the substrate, wherein, a plurality of openings are arranged in the reflection structure to make the reflection structure formed into a structure in a regular pattern, and further, one part of the surface of the substrate is exposed. The buffer layer is arranged on the exposed part of the surface of the reflection structure and the substrate and fills the openings. The light-emitting epitaxy structure is arranged on the buffer layer.
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Description

technical field

[0001] The present invention relates to a light-emitting element, and in particular to a light-emitting diode (Light-Emitting Diode; LED) and a manufacturing method thereof. Background technique

[0002] Semiconductor light-emitting elements, such as light-emitting diodes, are elements made of semiconductor materials, which are tiny solid-state light sources that can convert electrical energy into light energy. Because this type of semiconductor light-emitting element is not only small in size, but also has the characteristics of low driving voltage, fast response rate, shock resistance, and long life, and can meet the needs of various application equipment for lightness, thinness, shortness, and smallness, it has become a daily Optoelectronic components that are quite common in life.

[0003] At present, when making light-emitting diode elements, low-temperature aluminum indium gallium nitride is directly grown on the substrate as a buffer layer. In this w...

Claims

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