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Method for forming w-based film, method for forming gate electrode, and method for manufacturing semiconductor device

A film forming method and gate electrode technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of increased gate leakage current, deterioration of surface roughness, thickening, etc., and achieve the purpose of suppressing gate leakage. Electric current, the effect of suppressing abnormal growth

Inactive Publication Date: 2008-08-06
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, when using W(CO) as a source of W 6 When forming a WSi film or a WN film, etc., there is a problem that the oxygen element produced by its decomposition enters the film, and this oxygen moves to the high-k film during the annealing process. SiO 2 Thickened film thickness in terms of capacity (EOT)
In addition, if Si-containing gas and N-containing gas are added to W(CO) 6 Among them, the WSi film and WN film are formed by the usual CVD method, and the surface roughness (roughness) deteriorates, which leads to the problem that the gate leakage current increases.

Method used

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  • Method for forming w-based film, method for forming gate electrode, and method for manufacturing semiconductor device
  • Method for forming w-based film, method for forming gate electrode, and method for manufacturing semiconductor device
  • Method for forming w-based film, method for forming gate electrode, and method for manufacturing semiconductor device

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Experimental program
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Effect test

Embodiment 1

[0086] In the apparatus of FIG. 1 , the holder 22 was heated at a set temperature of 672° C. in advance, and a wafer of 300 mm was placed on the holder 22 by a transfer device. In this state, Ar gas as a carrier gas and Ar gas as a diluent gas were supplied at a ratio of carrier Ar / diluted Ar=60 / 340 mL / min (sccm) as described above, and W(CO ) 6 It is introduced into the chamber 21 to form an extremely thin W film on the wafer (first step).

[0087] Next, Ar gas as a purge gas was introduced into the chamber 21 at a flow rate of 400 mL / min (sccm) at intervals of 10 sec, and the inside of the chamber 21 was purged (second step).

[0088] Next, the SiH 4 gas and Ar gas as diluent gas to SiH 4 / dilute Ar = 100 / 300mL / min (sccm) and supply SiH at intervals of 5 sec 4 It is introduced into the chamber 21, and an extremely thin Si film is formed on the W film formed in the first step (third step).

[0089] Next, Ar gas as a purge gas was introduced into the chamber 21 at a flow...

Embodiment 2

[0092] In the apparatus of FIG. 1 , the holder 22 was heated at a set temperature of 672° C. in advance, and a wafer of 300 mm was placed on the holder 22 by a transfer device. In this state, Ar gas as a carrier gas and Ar gas as a diluent gas are supplied at a ratio of carrier Ar / diluted Ar = 60 / 340 mL / min (sccm) as described above and W(CO) is supplied at intervals of 10 sec. 6 It is introduced into the chamber 21 to form an extremely thin W film on the wafer (first step).

[0093] Next, Ar gas as a purge gas was introduced into the chamber 21 at a flow rate of 400 mL / min (sccm) at intervals of 10 sec, and the inside of the chamber 21 was purged (second step).

[0094] Next, the SiH 4 gas and Ar gas as diluent gas to SiH 4 / dilute Ar = 100 / 300mL / min (sccm) and supply SiH at 1sec intervals 4 It is introduced into the chamber 21, and an extremely thin Si film is formed on the W film formed in the first step (third step).

[0095] Next, Ar gas as a purge gas was introduced...

Embodiment 3

[0114] In the apparatus of FIG. 7 , the holder 22 was heated at a set temperature of 672° C. in advance, and a wafer of 300 mm was placed on the holder 22 by a transfer device. In this state, Ar gas as a carrier gas and Ar gas as a diluent gas were supplied at a ratio of carrier Ar / diluted Ar = 60 / 300 mL / min (sccm) as described above, and W(CO ) 6 It is introduced into the chamber 21, and an extremely thin W film is formed on the wafer (fifth step).

[0115] Next, Ar gas as a purge gas was introduced into the chamber 21 at a flow rate of 360 mL / min (sccm) at intervals of 10 sec, and the inside of the chamber 21 was purged (sixth step).

[0116] Next, the NH 3 gas and Ar gas as diluent gas in NH 3 / dilute Ar = 310 / 50mL / min to supply, and NH at 5sec intervals 3 It is introduced into the chamber 21, and an extremely thin WN film is formed by nitriding the W film formed in the fifth step (seventh step).

[0117] Next, Ar gas as a purge gas was introduced into the chamber 21 ...

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Abstract

Disclosed is a method for forming a W-based film comprising a step for placing a substrate in a process chamber, a step for forming a WSi film by alternately repeating deposition of W through introduction of a W(CO)6 gas into the process chamber and silicification of W or deposition of Si through introduction of an Si-containing gas into the process chamber, and a step for purging the process chamber between the supply of the W(CO)6 gas and the supply of the Si-containing gas.

Description

technical field [0001] The present invention relates to a method of forming a W-based film, a method of forming a gate electrode using the same, and a method of manufacturing a semiconductor device. Background technique [0002] In the prior art, in MOS type semiconductors, polysilicon (Poly-Si) is used as the gate electrode, and SiO 2 , SiON as the gate insulating film. However, in recent years, with the development of high integration of LSI, the technology of thinning the gate insulating film has also been improved, and its film thickness has become less than 2nm, and the DC tunnel leakage current ( directtunnel leak current) becomes apparent. Therefore, attempts have been made to reduce the gate leakage current by increasing the film thickness by using a so-called high-k material having a specific permittivity higher than that of an oxide film as the gate insulating film. [0003] However, when a gate insulating film made of Hf-based material, which is a representativ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/285C23C16/16C23C16/42H01L21/28H01L21/8238H01L27/092H01L29/423H01L29/49H01L29/78
CPCC23C16/45525C23C16/34H01L21/28097C23C16/42H01L29/4975C23C16/16
Inventor 山崎英亮
Owner TOKYO ELECTRON LTD