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Method for characterizing metal organic double layer thin film mass transfer microcosmic mechanism

A metal-organic, thin-film technology, applied in measurement devices, material analysis by electromagnetic means, instruments, etc., can solve the problems of complex process, difficult to obtain, and inability to accurately determine the microscopic mechanism of diffusion.

Inactive Publication Date: 2008-09-10
FUDAN UNIV
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Problems solved by technology

There are mainly two types of methods for studying the microcosmic mechanism of diffusion or mass transfer: one is to analyze the microcosmic mechanism of diffusion by testing the activation energy of diffusion ([3] Luo Yufeng, Li Jin, Research on the Kinetics of Oxidation of Nano-copper Films, Acta Chemie Sinica, accepted ), but this method has many influencing factors and complex process, and it is often impossible to accurately determine the microcosmic mechanism of diffusion; the second is to use the element tracer method to characterize the microcosmic mechanism of element diffusion ([4]L.Tian, ​​R.Dieckmann.Journal ofNon-Crystalline Solids, 2001, 281 (1-3): 55-60), in general, the element marking method is carried out using isotopes (radioactive or non-radioactive) ([5] M.M.Abou-Mesalam, I.M.Ei-Naggar.Colloids and Surfaces A: Physicochem.Eng.Aspects, 2003, 215: 205-211), the purpose of which is to study the physical and chemical processes involved in the case where the marker elements do not affect the physical and chemical properties of the entire material
This method can obtain the microscopic mechanism of element diffusion most directly and accurately, but the isotopes of many elements are expensive and difficult to obtain, and if they are radioactive isotopes, many other unfavorable factors must be considered. many restrictions

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  • Method for characterizing metal organic double layer thin film mass transfer microcosmic mechanism
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  • Method for characterizing metal organic double layer thin film mass transfer microcosmic mechanism

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Embodiment Construction

[0021] Firstly, the physical vapor deposition method is used at a vacuum degree of not less than 2×10 -3 Deposit a double-layer metal M on the substrate under the vacuum condition of Pa 1 , M 2 And use SIMS analysis to determine the metal layer M 1 There is no obvious interdiffusion phenomenon between M2 and M2; under the same conditions, metal / organic thin films with different thickness ratios are evaporated, and electrochemical reactions occur under certain conditions to form metal-organic complex thin films, which are determined by testing their transmission spectra. The optimal thickness ratio of the reaction; under the same vacuum condition, the metal M is sequentially evaporated on the substrate 1 (Heterogeneous Metal) Thin Film, Metal M 2 (Measurement metal) thin film, organic thin film, get M 1 ,M 2 , a three-layer film system of organic matter, wherein the ratio of the total thickness of the metal layer to the thickness of the organic matter is slightly greater t...

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Abstract

The invention belongs to the technical field of film mass transferring characterization, particularly relating to a method for characterizing the micro mechanism of the mass transferring of a metal organic double-layer film, which is characterized in that the micro mechanism of the metal organic multi-layer film system is obtained by using a heterogeneous element as a mark and analyzing the element distribution of the metal organic multi-layer film system by SMS after the mass transformation is finished. The method can effectively research the micro mechanism of the mass transformation in the process of complexation of metal organics, thus having important scientific values.

Description

technical field [0001] The invention belongs to the technical field of mass transfer characterization of thin films, and in particular relates to a method for characterizing the microcosmic mechanism of mass transfer of metal-organic bilayer thin films. Background technique [0002] Metal-organic complex materials such as MTCNQ have a wide range of applications in microelectronic devices and molecular electronic devices due to their electrical bistability ([1] Potember R S, Poehler T O, Appl. Phys Lett., 1979, 34: 405). application prospects. Here, M is a metal, such as Cu, Ag, etc., and TCNQ is 7,7,8,8 tetracyanoquinone dimethane (7,7,8,8-tetracyanoquinonedimethane). Usually, these complexes exist in the form of thin films. Due to the small layer thickness of these films, interdiffusion between sublayers is highly prone to occur. On the other hand, due to the different film-forming substances, the electronic states in each layer are different, which can lead to accelerat...

Claims

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Application Information

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IPC IPC(8): G01N27/00H01J49/00
Inventor 蒋益明廖家兴刘平李劲
Owner FUDAN UNIV
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