Phase change storage unit using Schottky base diode as selection tube and its making method

Abstract

The invention pertains to the technical field of micro-electronics and discloses a phase change memory device provided with a Schottky diode and a preparation method thereof. The phase change memory device is basically characterized in that a structural unit is composed of the Schottky diode and the phase change memory device; the Schottky diode serves as a gate tube of the phase change memory device; the Schottky diode produces an N-type or P-type Si single crystal film by solid epitaxial technique and the N-type or P-type single crystal film forms a metal semiconductor contact together with a metal film. The Schottky diode prepared by the method has the advantages of stable performance, fast speed and great drive current. The structure disclosed by the invention is characterized in that the structure is applied to highly intense phase change memory devices and can lower the production cost of the phase change memory devices at the same time.

Description

technical field [0001] The invention relates to a phase-change storage unit using Schottky diodes and a preparation method, belonging to the field of phase-change storage in microelectronic technology. Background technique [0002] Memory occupies an important position in the semiconductor market. Only DRAM (Dynamnic Random Access Memory) and FLASH occupy 15% of the entire market. With the gradual popularization of portable electronic devices, the market for non-volatile memory is also growing. At present, FLASH It accounts for the mainstream of non-volatile memory, accounting for about 90%. However, with the advancement of semiconductor technology, FLASH has encountered more and more technical bottlenecks. First, the floating gate for storing charges cannot be thinned indefinitely with the development of integrated circuit technology. In addition, other shortcomings of FLASH technology also limit Its application, such as data writing is slow, high voltage is required when ...

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Problems solved by technology

However, this technology also encounters some problems at present. For example, the diode prepared by this method will produce parasitic triodes, which will interfere with the read and write operations of adjacent cells [J.H.Oh, J.H.Park, Y.S. H.S.Lim, Y.T.Oh, J.S.Kim, J.M.Shin, J.H.Park, Y.J.Song, K.C.Ryoo, D.W.Lim, S.S.Park, J.I.Kim, J.H.Kim, J.Yu, F.Yeung, C.W.Jeong, J.H.Kong, D.H.Kang, G.H.Koh, G.T.Jeong, H.S.Jeong, and Kinam Kim; Full Integration of Highly Manufacturable 512MbPRAM based on 90nm Technology; Electron Devices Meeting, 2006.IEDM′06.International, 11-13Dec.2006Page(s):1-4]

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