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Apparatus for improving hydride vapour phase epitaxy growth GaN material homogeneity

A hydride vapor phase, epitaxial growth technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problem of not meeting the needs of practical applications, and achieve the effect of uniform distribution and uniform airflow distribution.

Inactive Publication Date: 2010-06-02
NANJING UNIV
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  • Description
  • Claims
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Problems solved by technology

However, it is still far from meeting the needs of practical applications.

Method used

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  • Apparatus for improving hydride vapour phase epitaxy growth GaN material homogeneity
  • Apparatus for improving hydride vapour phase epitaxy growth GaN material homogeneity
  • Apparatus for improving hydride vapour phase epitaxy growth GaN material homogeneity

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Embodiment Construction

[0013] The arrows in the figure indicate the flow direction of the source gas. There are many small holes 2 evenly distributed in the quartz plate shower head 1. The diameter of the small holes is 1-4mm, and the density of the distributed small holes is 3-20 per square centimeter. The quartz plate shower head is arranged above the surface of the growth substrate and the distance from the substrate is generally 5-20 mm. The shape of the quartz plate shower head can be circular or rectangular.

[0014] There are two ways to implement the technology of the present invention: 1. GaCl gas and carrier gas are sprayed from the shower head to the top of the substrate, and NH3, carrier gas and total N2 are mixed and horizontally enter the top of the substrate where they are mixed with GaCl gas and generated reaction. 2. NH3 gas and carrier gas are sprayed from the shower head to the top of the substrate, and GaCl gas, carrier gas and total N2 are mixed and then horizontally enter the ...

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Abstract

The invention provides a method for modifying homogenization of hydride gas phase epitaxial growth GaN material. In growth process of HVPE, GaCl or NH3 source gas is uniformly sprinkled on surface ofa growth substrate by quartz spray header. The quartz spray header has uniformly distributed holes and is parallel to the growth substrate. The spray header with rectangular(quadrate) structure can make the airflow distribution more uniform, sample is not needed to rotate, so that distribution of the source gas reacted above the substrate is more uniform.

Description

1. Technical field [0001] The invention relates to a method and a device for improving the growth uniformity of GaN material grown by hydride vapor phase epitaxy (HVPE). 2. Technical Background [0002] Group III-V nitride materials (also known as GaN-based materials) mainly composed of GaN, InGaN, and AlGaN alloy materials are new semiconductor materials that have attracted much attention in the world in recent years. GaN-based materials are direct bandgap wide-bandgap semiconductor materials with continuously variable direct bandgap between 1.9-6.2eV, excellent physical and chemical stability, high saturation electron drift velocity, high breakdown field strength and high thermal conductivity It has important applications in the preparation of short-wavelength semiconductor optoelectronic devices and high-frequency, high-voltage, and high-temperature microelectronic devices. It is used to manufacture light-emitting devices and detectors such as blue, purple, and ultraviole...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205C30B29/38C30B29/40C30B25/02
Inventor 修向前张荣陆海谢自力顾书林施毅韩平朱顺明胡立群郑有炓
Owner NANJING UNIV
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