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Methods for reducing write time in nonvolatile memory devices and related devices

A non-volatile storage and device technology, applied in non-volatile storage devices and related operating fields, can solve problems such as time-consuming

Active Publication Date: 2013-05-01
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the high voltage can be generated from the supply voltage, it may take time to generate the required high voltage or target voltage level, also referred to herein as "settling time"

Method used

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  • Methods for reducing write time in nonvolatile memory devices and related devices
  • Methods for reducing write time in nonvolatile memory devices and related devices
  • Methods for reducing write time in nonvolatile memory devices and related devices

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Embodiment Construction

[0030] The invention is described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like numbers refer to like elements throughout.

[0031] It should be understood that although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be construed by These terms are limited. These terms are only used to distinguish an element, component, region, layer or section...

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Abstract

A method of operating a non-volatile memory device includes maintaining a write voltage at a predetermined voltage level for programming and / or erasing a memory cell of the non-volatile memory device during a time between execution of consecutive write operations. For example, the write voltage may be activated at the predetermined voltage level responsive to an initial write command, and discharge of the write voltage may be prevented responsive to a signal indicating consecutive write commands. Related devices are also discussed.

Description

technical field [0001] The present invention relates to storage devices and related operating methods, in particular to non-volatile storage devices and related operating methods. Background technique [0002] Semiconductor memory devices can be classified into volatile and non-volatile types based on their ability to retain data in the absence of power. Volatile memory devices can include static and dynamic random access memory, (ie, SRAM and DRAM), while nonvolatile memory devices can include read-only memory (ROM). ROM can be of various types, such as erasable and programmable ROM (EPROM), electrical EPROM (EEPROM), flash memory, and so on. [0003] Non-volatile memory devices can offer several advantages in that they can offer smaller size, lower power consumption, and / or advanced read / write performance. For example, flash memory may be used to provide on-chip memory for portable devices that may require relatively fast data updates, such as cellular phones, digital ca...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10
CPCG11C16/30G11C16/10G11C16/08G11C16/14
Inventor 金善券李炳勋
Owner SAMSUNG ELECTRONICS CO LTD