Piezoelectric body, piezoelectric device, and liquid discharge apparatus

A piezoelectric body, liquid technology, applied in the field of piezoelectric body, can solve the problem of unable to maintain operation efficiency and so on

Active Publication Date: 2012-10-24
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Regarding the piezoelectric device described in Japanese Patent No. 3568107, as in the case of the piezoelectric device using only the ordinary electric field-induced stress of the ferroelectric substance, if the thickness of the piezoelectric device is reduced, the piezoelectric device with reduced thickness will be compatible with the High applied electric fields in the range of applied electric fields in which substantially no strain displacement is obtained and operating efficiency cannot be kept high

Method used

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  • Piezoelectric body, piezoelectric device, and liquid discharge apparatus
  • Piezoelectric body, piezoelectric device, and liquid discharge apparatus
  • Piezoelectric body, piezoelectric device, and liquid discharge apparatus

Examples

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Embodiment 1

[0158] The bottom plate is made of Si sheet. In addition, using sputtering technology, an Ir bottom electrode with a thickness of 150 nm, a Nb-doped PZT piezoelectric film with a thickness of 5.0 μm, and a Pt top electrode with a thickness of 150 nm were sequentially formed on the surface of the base plate. In this way, the piezoelectric device of the present invention can be obtained. Each of the bottom electrode, the piezoelectric thin film, and the top electrode is formed over the entire bottom plate area. The composition of the piezoelectric thin film was set so that the Zr / (Zr+Ti) molar ratio was equal to 0.52, and so that the Nb doping concentration at the B site was equal to 13 mol%.

[0159] For the piezoelectric thin film described above, simultaneous X-ray diffraction (XRD) measurement was performed. Figure 5 The XRD patterns in the initial state (that is, the state where no electric field is applied), the state when an electric field is applied at 50 kV / cm, ...

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Abstract

A piezoelectric body contains a ferroelectric substance phase having characteristics such that, in cases where an applied electric field is increased from the time free from electric field application, phase transition of the ferroelectric substance phase to a ferroelectric substance phase of a different crystal system occurs at least two times. The piezoelectric body should preferably be actuated under conditions such that a minimum applied electric field Emin and a maximum applied electric field Emax satisfy Formula (1), wherein the electric field E 1 represents the electric field at which the first phase transition of the ferroelectric substance phase begins.

Description

technical field [0001] The present invention relates to a piezoelectric body comprising a ferroelectric substance phase characterized in that the ferroelectric substance phase can be caused to undergo a phase transition by application of an electric field. The present invention also relates to a piezoelectric device equipped with the piezoelectric body, and a liquid discharge apparatus equipped with the piezoelectric device. Background technique [0002] A piezoelectric device equipped with a piezoelectric body and electrodes characterized in that it responds to an applied trans-piezoelectric force has hitherto been used as an actuator or the like mounted on an inkjet type recording head. The electrodes expand and contract with increases and decreases in the electric field of the piezoelectric body, and the electrodes are used to apply the electric field across the piezoelectric body. [0003] Hitherto, perovskite-type oxides such as lead zirconate titanate (PZT) have been ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/18H01L41/09B41J2/14
Inventor 坂下幸雄佐佐木勉冈本裕一中井宗纪
Owner FUJIFILM CORP
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