Solid-state imaging device, signal processing method for the same, and imaging apparatus

Abstract

Disclosed herein is a solid-state imaging device, including, a pixel array unit, driving means, signal processing means, level determining means and control means.

Description

Solid-state imaging device, signal processing method thereof, and imaging device technical field The present application relates to a solid-state imaging device, a signal processing method thereof, and an imaging device. Background technique FIG. 36 shows a configuration example of the unit pixel 100 of the solid-state imaging device 100 . As in this example, in the unit pixel 100 having the transfer transistor for transferring the signal charge obtained by the photoelectric conversion in the photoelectric conversion element 101, the accumulation of the floating diffusion capacitor (FD) that can be transferred to the unit pixel The maximum amount Qfd.max of charges is much larger than the maximum amount Qpd.max of accumulated charges in the photoelectric conversion element 101 as a light receiving unit. As a result, perfect transfer of signal charges from the photoelectric conversion element 101 to the floating diffusion capacitor 106 is achieved by removing the remaining...

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Problems solved by technology

(1) Since the maximum amount Qfd.max of the accumulated charge must be larger than the maximum amount Qpd.max of the accumulated charge in the photoelectric conversion element, there is a limit to lowering the capacitance of the floating diffusion transistor 106 in order to improve the charge-voltage conversion efficiency

(2) For the same reason as above, a decrease in the power supply voltage Vdd serving as a reset voltage of the floating diffusion capacitor 106 causes a decrease in the maximum amount Qfd.

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