Metal interlayer medium contact hole preparation method

Abstract

The invention discloses a manufacturing method of contact holes for medium between metal layers, which relates to the semiconductor manufacturing area. The manufacturing method includes steps of providing a semiconductor element substrate which comprises a grid and active areas positioned on bilateral sides of the grid, forming medium between metal layers on the grid and the active area by deposition, forming a barrier layer on the medium between metal layers by deposition, carrying out the first lighting step, and carrying out the first etching step, etching other parts of the barrier layer except for a part of the barrier layer corresponding to the grid, carrying out the second lighting step, carrying out the second etching step, and forming contact holes which are respectively communicated with the grid and the active areas on the medium between metal layers. Compared with the prior art, the manufacturing method avoids or at least reduces over-etching to the grid by arranging a barrier layer on the medium between metal layers, and increases yield of products.

Description

technical field [0001] The invention relates to the manufacturing technology in the field of semiconductors, in particular to a method for manufacturing a contact hole of an intermetallic dielectric. Background technique [0002] The active area and the gate of the semiconductor device are electrically connected to other metal interconnection layers by filling metal in the contact hole of the inter-metal dielectric. The height of the interlayer dielectric corresponding to the contact window of the active region is higher than that of the interlayer dielectric corresponding to the gate contact window. In this way, during the process of etching the contact hole, the gate is often over-etched and the conductivity of the gate is damaged. [0003] In the prior art, there is a stop layer (stop layer) between the active region and the gate of the semiconductor device and the inter-metal dielectric, and the stop layer reduces to a certain extent during the process of etching the con...

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Problems solved by technology

The height of the interlayer dielectric corresponding to the contact window of the active region is higher than the interlayer dielectric corresponding to the gate contact window, so that in the process of etching the contact hole, the gate is often over-etched and the conductivity of the gate is damaged.

[0003] In the prior art, there is a stop layer (stop layer) between the active region and the gate of the semiconductor device and the inter-metal dielectric, and the stop layer reduces to a certain extent during the process of etching the contact hole of the inter-metal dielectric. Overetching of the gate, but overetching often occurs

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