Composite refrigeration method and device for high-power electric semiconductor device

Abstract

The invention discloses a compound cooling method for a high-power power semiconductor device, pertaining to the field of semiconductor devices. A heat pipe with groups of radiating ribs / wing panels is arranged on a radiating module, a low-temperature cooling gas is forcedly / directly transmitted to various groups of radiating ribs / wing panels, and the cooling gas is utilized to constitute electrical insulating layers between air supply air distribution ducts and various groups of radiating ribs / wing panels. The invention further provides a compound cooling device which utilizes the method andis provided with a combined air-conditioning box body, an air processing device and an air suction / exhaust pipeline, an air inlet and an air outlet are arranged on the air-conditioning box body, the air processing device is connected with the air suction / exhaust pipeline, the air outlet end thereof is connected with the air inlet of the air-conditioning box body, the air outlet of the air-conditioning box body is connected with the air suction / exhaust pipeline, an air supply main pipe is arranged at the air inlet in the air-conditioning box body, and the separate air supply air distribution ducts are respectively correspondingly arranged between the air supply main pipe and the various groups of radiating ribs / wing panels. The compound cooling method overcomes the shortcomings of the traditional cooling modes, and the system structure is simpler.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, and in particular relates to a cooling device / system for power electronic devices (such as high-power thyristors). Background technique [0002] With the development of power electronics technology, more and more high-power power electronic devices (also known as power semiconductor devices) are used in static var compensation devices. [0003] During the working process of power electronic devices, the "junction temperature" increases due to the heat generated by various losses. [0004] The power electronic device is a semiconductor device with a relatively small thermal equivalent and is sensitive to heat generation. Almost all its parameters are related to thermal characteristics. Therefore, excessive "junction temperature" will cause damage to the normal working condition of the component and affect its Stability and reliability of operation. In order not to make its "junction temperat...

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Problems solved by technology

[0016] The disadvantages of oil cooling are: ① high cost; ② low flammability and heat dissipation capacity, which is caused by the high viscosity and low flow rate of oil

[0022] According to the above analysis, although it is safe to use self-cooling and air-cooling cooling methods for power semiconductor devices, the heat transfer speed is slow, and the temperature difference between the two ends of the thyristor and the radiator is large, which restricts the cooling effect of high-power devices; Leakage, corrosion, discharge and other safety issues; the cost of oil cooling is high, and the heat dissipation effect is not satisfactory; the use of heat pipes has many advantages, but it needs the cooperation of a lower ambient temperature at the condensing end to fully exert its heat dissipation effect, otherwise it will not It is easy to meet the heat dissipation requirements of large-capacity power devices, which also restricts the application of heat pipes in the cooling of high-power power electronic devices to a certain extent

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