Unlock instant, AI-driven research and patent intelligence for your innovation.

Middling pressure plasma system for removing surface layer without losing substrate

A plasma and surface layer technology, applied in the direction of circuits, discharge tubes, electrical components, etc., can solve problems such as corrosion of unprotected surfaces

Inactive Publication Date: 2010-12-08
AXCELIS TECHNOLOGIES +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these more aggressive removal methods always result in some degree of corrosion to the unprotected surface

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Middling pressure plasma system for removing surface layer without losing substrate
  • Middling pressure plasma system for removing surface layer without losing substrate
  • Middling pressure plasma system for removing surface layer without losing substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] In the following description, numerous specific details are set forth, such as specific processing values ​​or parameters, in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without such specific details. In other instances, well-known components have been shown in block diagram form in order not to obscure the invention in unnecessary detail. For the most part, details relating to specific semiconductor product applications, etc., are omitted because such details are not necessary for, and are within the skill of, one of ordinary skill in the relevant art to gain a thorough understanding of the present invention .

[0023] Referring now to the drawings, wherein depicted elements are not necessarily shown to scale, and wherein like or similar elements are designated with like reference numerals throughout the several views.

[0024] figure 1 A schem...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A system and method for removing photoresist or other organic compounds from semiconductor wafers is provided. Non-fluorinated reactant gases (O2, H2, H2O, N2 etc.) are activated in a quartz tube by a medium pressure surface wave discharge. As the plasma jet impinges on a substrate, volatile reaction products (H2O, CO2, or low molecular weight hydrocarbons) selectively remove the photoresist fromthe surface. The medium pressure also enables high gas temperatures that provide an effective source of heat in the reactive zone on the wafer that enhances etch rates and provides a practical means of removing ion implanted photoresist.

Description

[0001] Cross references to related applications [0002] This application claims priority under 35 U.S.C §119(e) to U.S. Provisional Application No. 60 / 633,673 filed 12 / 06 / 2004. technical field [0003] The present invention relates generally to semiconductor processing, and in particular to the selective removal of surface layers from workpieces such as semiconductor wafers in the manufacture of integrated circuits. It will be appreciated that although the following discussion is directed to semiconductor manufacturing processes, the present invention may be applied to a variety of manufacturing processes and equipment such that the present invention should not be limited to semiconductor manufacturing. Background technique [0004] Photoresist masks define each layer of an integrated circuit (IC), from front-end-of-line (FEOL) ion implantation for insulation, P or N well doping, threshold voltage adjustment, and source-drain contacts, to back-end end-of-line (BEOL) plasma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
CPCH01J37/32192H01J2237/3346H01J37/32752
Inventor J·沃尔夫A·斯里瓦斯塔瓦I·贝里P·萨克蒂维尔
Owner AXCELIS TECHNOLOGIES