Ferroelectric thin-membrane phase shifter and preparation thereof

Abstract

The invention relates to a ferro-electricity film phase shifter, pertaining to the field of microwave engineering technology, which comprises a coplanar line structure that comprises a transmission line constituted by a general conductive film and ground planes on both sides thereof. Aequilate slots are arranged between the ground planes and the transmission line, interdigited capacitor structures are arranged mutually and periodically on the transmission line and the ground planes on both sides thereof, the conductive film is directly fixed on to the substrate of an underlay, and ferro-electricity films are provided in the slots between the mutually interdigited transmission line and the ground planes. The intedigited capacitor structure of the invention places equal attention to advantages of simple manufacturing technology of a general intedigited capacitor and to that a parallel plate capacitor structure can highly concentrate impressed electric field into the ferro-electricity film, thus realizing the advantage of large phase shifting capacity under low voltage and having potential and broad practical prospect.

Description

technical field [0001] The invention relates to a novel ferroelectric thin film phase shifter, and also relates to a manufacturing method of the ferroelectric thin film phase shifter, which belongs to the technical field of microwave engineering. Background technique [0002] Phased array antennas are widely used in radar and communication systems. In a high-precision phased array antenna, the cost of making a phase shifter accounts for about 40% of the cost of the entire phased array antenna. So far, the most studied phase shifters are those based on ferrite materials or semiconductor devices. Phased array antennas based on ferrite materials are large in size and consume a lot of power, and the response of the beam to the control signal is relatively slow. Therefore, there are obvious deficiencies in the application fields requiring fast scanning. Although the phased array antenna designed and manufactured by semiconductor devices can meet the requirements of fast scanni...

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Problems solved by technology

However, the structure itself has a large fringe capacitance, which cannot make full use of the modulation capability of the barium strontium titanate film. Usually, the interdigital spacing of a few microns results in a weaker modulation electric field under the same applied voltage.

The ferroelectric capacitor designed and manufactured with this structure has weak modulation ability

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