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De-interweaving device and receiver

A de-interleaving and receiver technology, applied in the field of embedded eDRAM to realize time-domain de-interleaving, can solve the problems of many external memory pins and high power consumption, and achieve the effect of less external pins, low power consumption, and improved performance

Inactive Publication Date: 2009-01-14
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention provides a deinterleaving device and a receiver to overcome the defects of many external memory pins and high power consumption in the prior art, reduce system complexity, and be more convenient to use

Method used

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  • De-interweaving device and receiver
  • De-interweaving device and receiver
  • De-interweaving device and receiver

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0064] A=0x2D0 (decimal is 720)

[0065] DIN=0x401FEE

[0066] C=(A>>2)*3=0x21C (540 in decimal)

[0067] Because A[1:0]=0x2b00

[0068] In address 0x21C: rdata=[0x21C]=0x43604F43

[0069] Therefore, Dout = 0x43604F

[0070] Wdata[ox21C]=0x401FEE43

example 2

[0072] A=0x2D1 (decimal is 721)

[0073] DIN=0x405FF1

[0074] C=(A>>2)*3=0x21C (540 in decimal)

[0075] C+1=0x21D (decimal is 541)

[0076] Because A[1:0]=0x2B01

[0077] In address 0x21C: rdata=[0x21C]=0x401FEE43, note that 24bits MSB (0x401FEE) is reserved, and 8bits LSB (0x43) is replaced by Din[23:16] (0x40);

[0078] In address 0x21D: rdata=[0x21D]=0x23B04061, 16bits MSB (0x23B0) is replaced by Din[15:0] (0x5FF0), while 16bits LSB (0x4061) is reserved.

[0079] Therefore: Dout=0x4323B0; Wdata[0x21C]=0x401FEE40; Wdata[0x21D]=0xFF04061.

example 3

[0081] A=0x2D2 (decimal is 722)

[0082] DIN=0x40DDF1

[0083] C=(A>>2)*3=0x21C (540 in decimal)

[0084] C+1=0x21D (decimal is 541)

[0085] C+2=0x21E (decimal is 542)

[0086] Because A[1:0]=2

[0087] In address 0x21D: rdata=0x5FF04061, 16bits MSB (0x5FF0) reserved, replace 16bits LSB with Din[23:8] (0x40DD);

[0088] In address 0x21E: rdata=0xCF40DC0F, 24bits LSB (0x40DC0F) reserved, replace 8bits MSB with Din[7:0] (0xF1);

[0089] Therefore: Dout=0x4061CF; Wdata[0x21D]=0x5FF040DD; Wdata[0x21E]=0xF40DC0F.

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Abstract

The present invention realizes the time domain de-interleaving using embedded eDRAM in a time domain synchronous orthogonal frequency division multiplexing receiver, belonging to de-interleaving domain of digital communication. A receiver having a de-interleave with a processor for processing interleaved data; and a built-in eDRAM coupled to the processor for processing the interleaved data is provided.

Description

technical field [0001] The present invention belongs to the deinterleaving field of digital communication, and more specifically, relates to a time domain synchronous orthogonal frequency division multiplexing (Time Domain Synchronous Orthogonal Frequency Division Multiplexing, TDS-OFDM) receiving system, in a finite state machine (Finite State Machine , FSM) implementation, using embedded eDRAM to achieve time-domain deinterleaving. Background technique [0002] For TDS-OFDM receivers, time-domain deinterleaving is used to improve the ability to resist impulse noise. For example, a typical time-domain deinterleaver, which uses convolutional deinterleaving, requires a storage space of B*(B- 1) A memory of *M / 2, where B is the interleaving width, and M is the interleaving depth. Since the required time-domain deinterleaving length is generally very large, usually do not use a larger capacity on-chip memory, but use a lower cost, separate or easy-to-purchase SDRAM (Dynamic Ra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04L1/00H04L27/26H04L25/03H04B1/707
CPCH04L1/005H04L1/0071H04L1/0057
Inventor 钟彦杨海耘
Owner TSINGHUA UNIV
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