Manufacturing method of green light LED

A technology of light-emitting diodes and manufacturing methods, which can be applied to semiconductor devices, electrical components, circuits, etc., and can solve problems such as poor antistatic ability and low external quantum efficiency
CN101359710AActive Publication Date: 2009-02-04EPILIGHT TECH +2
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
EPILIGHT TECH
Publication Date
2009-02-04

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Abstract

The invention relates to a method for fabricating a green LED, which is mainly characterized in that through the introduction of an insert layer into an epitaxial growth InGaN / GaN quanta well, V type defects between the InGaN and the GaN is reduced and In precipitation is reduced; thus, the green LED with high brightness and strong antistatic ability can be obtained. With the introduction of the insert layer, the brightness of a 300micronx300micron green LED chip at 520nm under 20mA is improved from 100mcd to 250mcd and the antistatic ability of the chip is increased from HBM 500V (human-body model) to HBM 4000V.
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Description

technical field

[0001] The invention relates to a metal organic vapor deposition (MOCVD) epitaxial growth method of a III-V nitride material based on gallium nitride (GaN), in particular to a manufacturing method of a green light emitting diode. Background technique

[0002] GaN-based III-V nitrides are important direct-bandgap wide-bandgap semiconductor materials. GaN-based materials have excellent material mechanical and chemical properties, excellent photoelectric properties, and their bandgap ranges from 0.7eV (InN) to 6.2eV (AlN) at room temperature. Deep ultraviolet, GaN-based materials have a wide range of application backgrounds in the field of optoelectronic devices such as blue light, green light, purple light and white light diodes.

[0003] In recent years, the external quantum efficiency of GaN-based blue LEDs has been greatly improved, reaching 45% (see: Appl. Phys. Lett 89, 071109), but the external quantum efficiency of green light-emitting diodes is much lo...

Claims

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