Manufacture process of self-aligning silicides film and structure thereof

Abstract

The invention discloses a self-alignment silicide SAB manufacture procedure which is used for the manufacture procedure requiring the use of a non-self-alignment silicide device. The SAB manufacture process comprises the following steps: settling an SAM film which has an ONO structure; photoetching the SAB film; manufacturing the non-self-alignment silicide device; etching the SAB film through the dry method, wherein the dry method etching process is an end-point control process; and etching the SAB film through the wet method. The invention further discloses a self-alignment silicide SAB film structure. The SAB film having the ONO structure in the invention has good photoetching property. In addition, the invention utilizes the significant light reflection properties exist between a SiO2 layer and a SiON layer to accurately control the dry method etching process by adopting the end-point control manner, thereby ensuring the safety of the device and obtaining the ideal etching speed.

Description

technical field [0001] The invention relates to semiconductor process technology, more specifically, to a self-aligned silicide SAB process and structure. Background technique [0002] In the semiconductor manufacturing process, the Ti / Co silicide process is a self-aligned process, also known as the salicide process. Because Ti / Co can react with Si, but not with silicon oxide (such as SiO2), silicon nitride (such as Si3N4) or silicon oxynitride (SiON). Therefore, Ti / Co silicide will only find the part of Si to react, and for the part covered by silicon oxide (such as SiO2), silicon nitride (such as Si3N4) or silicon oxynitride (SiON), no The reaction will proceed, just like the Ti / Co silicide will self-align the Si part. Therefore, the Ti / Co silicide process is called a self-aligned process, or a self-aligned silicide process (salicide). [0003] In the manufacturing process of semiconductor devices, some devices require the salicide process, and some devices require the ...

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Problems solved by technology

[0006] 2) For the SAB film made of SRO material, the accuracy of dry etching is not high

But, because in the deposition process of actual SAB film, the thickness of SAB film can be different each time, and predetermined time is not often changed, like this, sometimes dry etching process can appear too long, causes potential The possibility of device damage, and sometimes the dry etching process is insufficient, so that more SAB films need to be removed by wet etching, resulting in increased process time

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