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Resist composition, method for forming resist pattern, polymer compound, and copolymer

A technology of resist pattern and composition, which is applied in the direction of photolithographic process, instrument, and optomechanical equipment on the pattern surface, which can solve the problem of acid diffusion control and achieve good photolithographic characteristics and high sensitivity Effect

Active Publication Date: 2019-05-21
TOKYO OHKA KOGYO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] In particular, when exposing a resist film to EUV (extreme ultraviolet light) or EB (electron beam), controllability of acid diffusion becomes a problem in the resist material

Method used

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  • Resist composition, method for forming resist pattern, polymer compound, and copolymer
  • Resist composition, method for forming resist pattern, polymer compound, and copolymer
  • Resist composition, method for forming resist pattern, polymer compound, and copolymer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0882] (Example 1, Comparative Examples 1-4)

[0883] Each component shown in Table 1 was mixed and dissolved to prepare a resist composition (solid content concentration: 3.0% by mass) of each example.

[0884] 【Table 1】

[0885]

[0886] In Table 1, each abbreviation has the following meanings, respectively. The values ​​in [ ] are blending amounts (parts by mass).

[0887] (A1)-1: the above-mentioned polymer compound (A1-1).

[0888] (A2)-1: a polymer compound represented by the following chemical formula (A2-1). The weight average molecular weight (Mw) in terms of polystyrene standard calculated|required by GPC measurement was 7000, and the molecular weight distribution (Mw / Mn) was 1.50. pass 13 The copolymer composition ratio (ratio (molar ratio) of each structural unit in the structural formula) obtained by C-NMR was 1 / m / n / o=3 / 1 / 5 / 1.

[0889] 【Chemical 67】

[0890]

[0891] (A2)-2: a polymer compound represented by the following chemical formula (A2-2). The...

Embodiment 2～6、 comparative example 5～10

[0957] Each component shown in Table 4 was mixed and dissolved to prepare a resist composition (solid content concentration: 2.0% by mass) of each example.

[0958] 【Table 4】

[0959]

[0960]

[0961] In Table 4, each abbreviation has the following meanings, respectively. The values ​​in [ ] are blending amounts (parts by mass).

[0962] (A')-1 to (A')-5: the above-mentioned copolymer (A1'-1-1) to copolymer (A1'-1-5).

[0963] (A')-6 to (A')-11: the above-mentioned copolymer (A2'-1) to copolymer (A2'-6).

[0964] (B)-2: An acid generator composed of a compound represented by the following chemical formula (B)-2.

[0965] (D)-1: An acid diffusion control agent composed of a compound represented by the following chemical formula (D)-1.

[0966] (S)-2: A mixed solvent of propylene glycol monomethyl ether acetate / propylene glycol monomethyl ether=60 / 40 (mass ratio).

[0967] 【Chemical 78】

[0968]

[0969]

[0970] On an 8-inch silicon substrate treated with hexa...

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Abstract

A resist composition that generates an acid upon exposure to light, while having a solubility in a developer liquid, which is changed by the action of an acid. This resist composition is characterizedby containing a polymer compound that has a constituent unit represented by general formula (a0-1). In formula (a0-1), R represents a hydrogen atom, an alkyl group or a halogenated alkyl group; Va0 represents a divalent hydrocarbon group; na0 represents a number of 0-2; Ra00 represents an acid-cleavable group represented by general formula (a0-r1-1); each of Ra01 and Ra02 represents a hydrocarbongroup, and Ra01 and Ra02 may combine with each other to form a ring structure; Ya0 represents a quaternary carbon atom; each of Ra031, Ra032 and Ra033 represents a hydrocarbon group, and at least oneof Ra031, Ra032 and Ra033 represents a hydrocarbon group that has at least a polar group.

Description

technical field [0001] The present invention relates to a resist composition, a method for forming a resist pattern, a polymer compound, and a copolymer. [0002] This application claims priority based on Japanese Patent Application No. 2016-197492 filed in Japan on October 5, 2016, and Japanese Patent Application No. 2017-176005 filed in Japan on September 13, 2017, the contents of which are incorporated herein by reference. Background technique [0003] In photolithography, for example, a process of forming a resist film made of a resist material on a substrate, selectively exposing the resist film, and performing a development treatment is carried out so that A resist pattern of a predetermined shape is formed on the film. A resist material in which the exposed portion of the resist film becomes soluble in a developing solution is called a positive type, and a resist material in which the exposed portion of a resist film becomes insoluble in a developing solution is call...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/038C08F20/26G03F7/039G03F7/20
CPCG03F7/0397C08L33/14C08F220/283C08F220/281C08F220/382C08F220/20C08F2/50C08F220/26G03F7/038G03F7/039G03F7/2004G03F7/26G03F7/0045G03F7/2002G03F7/2059C08F20/26G03F7/20
Inventor 长峰高志仁藤豪人藤崎真史藤井达也福村友贵小岛孝裕铃木一生池田卓也阮庆信
Owner TOKYO OHKA KOGYO CO LTD
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