Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thin-film transistor substrate, electric moistening type display apparatus method for manufacturing the thin-film transistor substrate

一种薄膜晶体管、制造方法的技术，应用在电湿润式显示装置领域，能够解决薄膜晶体管基板可靠性低等问题，达到显示效果佳、电场均匀、可靠性高的效果

Active Publication Date: 2009-02-25
INNOCOM TECH (SHENZHEN) CO LTD +1
View PDF0 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] In order to solve the problem of low reliability of the thin film transistor substrate mentioned above, it is necessary to provide a thin film transistor substrate with high reliability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin-film transistor substrate, electric moistening type display apparatus method for manufacturing the thin-film transistor substrate
  • Thin-film transistor substrate, electric moistening type display apparatus method for manufacturing the thin-film transistor substrate
  • Thin-film transistor substrate, electric moistening type display apparatus method for manufacturing the thin-film transistor substrate

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0065] Compared with the first embodiment, since the second metal layer 533 of the electrowetting display device 5 is made of indium tin oxide or indium zinc oxide, which is stronger in texture and more stable in connection with other metals, the reflective electrode 521 The connection with the drain 546 is firmer and more stable.

[0066] see Figure 9 , is a schematic structural view of the third embodiment of the electrowetting display device of the present invention. The difference between the electrowetting display device 6 and the electrowetting display device 5 is that the reflective electrode 621 includes a first metal layer 631 , a second metal layer 633 , a buffer layer 634 and a protection layer 632 . The second metal layer 633 is disposed on the passivation layer 624 , and the buffer layer 634 is disposed on the second metal layer 633 with a thickness of 500A. The first metal layer 631 is disposed on the buffer layer 634 with a thickness of 1000A. The passivatio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a thin film transistor base plate, an electrowetting displaying device and a production method for the thin film transistor base plate. The thin film transistor base plate comprises a substrate, a plurality of thin film transistors arranged on the substrate, a plurality of reflecting electrodes arranged on the substrate and a water-repellent insulating layer arranged on the reflecting electrodes, wherein each reflecting electrode comprises a first metal layer and a transparent protective layer, and the first metal layer is arranged between the protective layer and the substrate.

Description

technical field [0001] The invention relates to a thin film transistor substrate, a manufacturing method of the thin film transistor substrate and an electrowetting display device using the thin film transistor substrate. Background technique [0002] Nowadays, many optoelectronic technologies are developing rapidly and applied to the next generation flat panel display, such as projection display (Projection Display), flexible display (FlexibleDispaly) and so on. In this environment, a display device based on the principle of electrowetting has attracted extensive attention due to its advantages such as fast response speed, wide viewing angle, low power consumption, light weight and portability. [0003] see figure 1 , is a schematic plan view of a reflective display device based on the principle of electrowetting disclosed in the prior art. The display device 1 includes a plurality of pixel units 10 arranged in a matrix, and the pixel units 10 are controlled to display di...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L23/48H01L21/84H01L21/28G02B26/02G09F9/37
CPCG09G3/3433G02B26/005H01J9/241G09G2300/04
Inventor 李睿匀黄荣龙
Owner INNOCOM TECH (SHENZHEN) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com