Unlock instant, AI-driven research and patent intelligence for your innovation.

Pixel construction, display panel, photovoltaic device and production process thereof

A pixel structure and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, optics, circuits, etc., can solve the problems of increasing the conductive layer and reducing the aperture ratio of the pixel structure, so as to achieve the effect of increasing the aperture ratio and reducing the area

Active Publication Date: 2009-03-11
AU OPTRONICS CORP
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, increasing the area of ​​the conductive layers 110, 120 will reduce the aperture ratio of the pixel structure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pixel construction, display panel, photovoltaic device and production process thereof
  • Pixel construction, display panel, photovoltaic device and production process thereof
  • Pixel construction, display panel, photovoltaic device and production process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] Figure 2A is a top view of a pixel structure according to an embodiment of the present invention. while Figure 2B is Figure 2A A schematic diagram of the three-dimensional structure of the area where the storage capacitor is located (corresponding to the I area) in the pixel structure. Please also refer to Figure 2AAs shown in FIG. 2B , the pixel structure includes a first patterned conductive layer 235 , a second patterned conductive layer 245 and a pixel electrode 275 on the substrate 200 .

[0059] In this embodiment, the material of the substrate 200 includes inorganic transparent materials (such as: glass, quartz, or other suitable materials, or a combination of the above), organic transparent materials (such as: polyolefins, polyols, polyalcohols) , polyesters, rubber, thermoplastic polymers, thermosetting polymers, polyaromatic hydrocarbons, polymethylmethacrylates, polycarbonates, or other suitable materials, or derivatives of the above, or combinations of th...

Embodiment 2

[0074] Figure 3A is a top view of a pixel structure according to another embodiment of the present invention. while Figure 3B is Figure 3A A schematic diagram of the three-dimensional structure of the region where the storage capacitor is located (corresponding to the I' region) in the pixel structure. Figure 3A and the labels and descriptions of FIG. 3B are substantially the same as those of the above-mentioned first embodiment Figure 2A 2B, so the repeated parts will not be described in detail. but please also refer to Figure 3A As shown in FIG. 3B , the pixel structure includes a first patterned conductive layer 235 , a second patterned conductive layer 245 and a pixel electrode 275 on the substrate 200 .

[0075] The first patterned conductive layer 235 includes a scan line 210 , a gate 220 , a common electrode line 230 and a second patterned layer 310 , wherein the scan line 210 is connected to the gate 220 . In more detail, it is an example that the scan line 21...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a pixel structure, a display panel, a photo-electric device and a manufacturing method thereof. The pixel structure comprises a base plate, a first patterned conducting layer, a second patterned conducting layer and a pixel electrode, wherein the first patterned conducting layer is arranged on the base plate, and the first patterned conducting layer comprises a scanning line, a grid connected with the scanning line and common electrode lines; the second patterned conducting layer is arranged above the first patterned conducting layer, and the second patterned conducting layer comprises a data line staggered with the scanning line, a source / drain electrode connected with the data line and a first pattern layer positioned above partial common electrode lines; and the pixel electrode is arranged above the second patterned conducting layer and provided with a first part and a second part, wherein the first part is used for covering one part of first pattern layer and the partial common electrode line, the second part is used for covering the other part of the first pattern layer of the and is connected to the source / drain electrode, and the first pattern layer and the second part form a first capacitor.

Description

technical field [0001] The present invention relates to a pixel structure and a manufacturing method thereof, and in particular to a pixel structure capable of increasing storage capacitance, a display panel and an optoelectronic device with the pixel structure and a manufacturing method thereof. Background technique [0002] The rapid progress of the multimedia society is mostly due to the rapid progress of semiconductor devices or display devices. As far as displays are concerned, thin film transistor liquid crystal displays (Thin Film Transistor Liquid Crystal Display, TFT-LCD) with superior characteristics such as high image quality, good space utilization efficiency, low power consumption, and no radiation have gradually become the mainstream of the market. [0003] A thin film transistor liquid crystal display (TFT-LCD) is mainly composed of a thin film transistor array, a color filter and a liquid crystal layer, wherein the thin film transistor array is composed of a ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/12H01L27/06H01L23/522H01L21/84H01L21/822H01L21/768G02F1/1362
Inventor 曾庆安
Owner AU OPTRONICS CORP