Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor technology method and semiconductor device system

A process method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, transportation and packaging, conveyor objects, etc., can solve problems such as chip damage

Active Publication Date: 2011-11-23
UNITED MICROELECTRONICS CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Another object of the present invention is to provide a semiconductor device system, which can solve the problem of serious damage to chips caused by multiple high-temperature furnace tube processes, and improve the stability of subsequent processes and the reliability and yield of components

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor technology method and semiconductor device system
  • Semiconductor technology method and semiconductor device system
  • Semiconductor technology method and semiconductor device system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] figure 1 It is a schematic configuration diagram of a semiconductor device system according to an embodiment of the present invention.

[0046] Please refer to figure 1, the semiconductor device system 100 includes at least one furnace tube equipment 110 for performing a high temperature furnace tube process. The so-called "high temperature furnace tube process" herein refers to a furnace tube process with a process temperature greater than or equal to 900°C. The semiconductor device system 100 of this embodiment has, for example, two furnace tube equipment 110 , namely the furnace tube equipment (A) and the furnace tube equipment (B). However, the present invention does not specifically limit the number of furnace tube equipment, which can be adjusted according to process requirements. The furnace tube device 110 is mainly composed of a wafer boat for loading chips and a furnace tube for placing the wafer boat therein. In addition, the furnace tube equipment usuall...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a semiconductor process method and a semiconductor device system. The semiconductor process at least comprises a first high-temperature furnace tube process and a second high-temperature furnace tube process. The method carries out the first high-temperature furnace tube process of a first wafer cassette which is loaded with at least one chip. Then, the second high-temperature furnace tube process is carried out on a second wafer cassette which is loaded with the chip. Furthermore, a movement step is carried out before the second high-temperature furnace tube process,thereby leading the relative positions of the chip on the first wafer cassette and the second wafer cassette to be different.

Description

technical field [0001] The present invention relates to an integrated circuit process and device, and in particular to a semiconductor process method and a semiconductor device system including a furnace tube process and furnace tube equipment. Background technique [0002] In the integrated circuit process, many steps must be carried out in a high temperature environment, such as the thermal diffusion process for doping ions, the thermal oxidation process for growing oxide layers, and the elimination of defects. Annealing (annealing) process. [0003] In the above heat treatment method, generally, the wafer is placed in a boat and sent into a furnace for reaction, and taken out after the reaction is completed. In addition, when the next furnace tube process is performed, the same lot of chips placed on the wafer boat is sent into the furnace tube for reaction again, and taken out after the reaction is completed. [0004] Generally speaking, the inside of the wafer boat wi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67H01L21/677H01L21/68H01L21/00H01L21/02
Inventor 于广友
Owner UNITED MICROELECTRONICS CORP