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Ceramic cover wafers of aluminum nitride or beryllium oxide

A technology of aluminum nitride ceramics and beryllium oxide ceramics, which is applied in the field of cleaning processing chambers, and can solve problems such as wafer uniformity and particle problems, cracking, etc.

Inactive Publication Date: 2009-04-29
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The formation of aluminum fluoride will lead to nodule formation, cracking and delamination which, in turn, will cause uniformity and particle problems for wafers subsequently placed on the susceptor

Method used

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  • Ceramic cover wafers of aluminum nitride or beryllium oxide
  • Ceramic cover wafers of aluminum nitride or beryllium oxide
  • Ceramic cover wafers of aluminum nitride or beryllium oxide

Examples

Experimental program
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Embodiment Construction

[0024] Figure 1 depicts a suitable processing chamber for carrying out the methods described in the examples. FIG. 1 is a vertical cross-sectional view of a processing chamber 10 , which is a simplified parallel-plate chemical vapor deposition (CVD) reactor with a vacuum chamber 15 . The processing chamber 10 includes an inlet manifold 11 for distributing gases to a substrate or wafer placed on a susceptor 12 . The susceptor 12 is highly temperature sensitive and is mounted on support fingers 13 so that the susceptor 12 (and the wafer supported on the upper surface of the susceptor 12) can be positioned between the lower loading / unloading position and the upper processing position 14. The upper position 14 is next to the intake manifold 11 for controllable movement.

[0025] When both the susceptor 12 and the wafer are in the processing position 14 , they are surrounded by a baffle plate 17 having a plurality of spaced holes 23 which vent to an annular vacuum manifold 24 . D...

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PUM

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Abstract

Embodiments of the invention provide a method and apparatus for protecting a susceptor during a cleaning operation by loading a ceramic cover substrate containing either aluminum nitride or beryllium oxide onto the susceptor before introducing the cleaning agent into the chamber. In one embodiment, an aluminum nitride ceramic cover substrate is provided which includes an aluminum nitride ceramic wafer having a thermal conductivity of greater than 160 W / m-K, a circular-shaped geometry having a diameter within a range from about 11 inches to about 13 inches, a thickness within a range from about 0.030 inches to about 0.060 inches, and a flatness of about 0.010 inches or less. The thermal conductivity may be about 180 W / m-K, about 190 W / m-K, or greater. The thickness may be within a range from about 0.035 inches to about 0.050 inches, and the flatness may be about 0.008 inches, about 0.006 inches, or less.

Description

technical field [0001] Embodiments described herein relate to a method and apparatus for cleaning a processing chamber. Background technique [0002] During a chemical vapor deposition (CVD) process, the reactive gases can form compounds that deposit on the interior surfaces of the chamber. As these deposits accumulate, the residue can flake off and contaminate subsequent processing steps. This residue deposition can also adversely affect other processing conditions such as deposition uniformity, deposition rate, film strength, and the like. [0003] Therefore, the processing chamber is typically cleaned periodically to remove residual material. Typically, the etch gas is used to clean the chamber after each process or several processes performed in the chamber. After a longer period of time, typically after about 1,000-2,000 wafers have been processed, the chamber is opened by hand and cleaned with rinse water and a cleaning wipe. Clearly, in order to increase the throu...

Claims

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Application Information

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IPC IPC(8): C23C16/04C23F1/12H01L21/00B08B7/00
Inventor 穆罕默德·M·拉希德
Owner APPLIED MATERIALS INC
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