Flash memory simulating device and main control module evaluation method for the flash

Abstract

The invention provides a piece of simulation equipment of a flash memory device and a method used for evaluating a flash memory main control module. The simulation equipment of the flash memory device includes a flash memory interface analog module (101) which is used for exchanging data with the flash memory main control module (202), a flash memory storage characteristic analog module (102) that is used for simulating signals of a flash memory and outputting the signals into the flash memory interface analog module (101), a data memory module (103) used for storing various data, an operating monitor module (105) that is used for receiving the signals input from the flash memory interface analog module (101), a system allocation module (104) used for controlling the work of the flash memory storage characteristic analog module (102), the data memory module (103) and the operating monitor module (105), and a communication interface module (106) used for exchanging data with a host computer (300). The invention can accurately and effectively evaluate various performance parameters of a flash memory storage system.

Description

technical field [0001] The invention relates to a flash memory device simulation device and a flash memory main control module evaluation method. Background technique [0002] Flash memory-based solid-state storage has developed rapidly due to its advantages of high shock resistance, low power consumption, high density, and high speed: from the SmartMedia card with a capacity of only a few MB at the beginning to the MultiMedia card, and now the commonly used GB High-level capacity MP3, U disk and other products can even form a massive solid-state memory with a capacity of several TB. Flash storage has penetrated into all aspects of people's production and life, and has become one of the most promising next-generation mainstream storage methods. At present, there are two main types of mainstream flash memory chips: NAND flash memory and NOR flash memory. NAND flash memory has high storage density and fast writing speed, and is suitable for massive data storage and access oc...

AI Technical Summary

Problems solved by technology

However, this method of software simulation is still very different from the actual working conditions of the system. It can only test the theoretical performance of the management algorithm, and cannot truly reflect its performance in the actual system and the performance of the overall system. Therefore, The test results can only be used as a reference

[0007] Therefore, it is difficult to comprehensively evaluate existing flash storage systems

First of all, the flash memory main control module shields the characteristics of flash memory from the upper-layer system, so that the upper-layer system cannot directly obtain the information of the underlying flash memory device. Therefore, corresponding to a certain access load, the only parameters that the upper-layer system can measure are the data throughput of the storage system The upper-level system cannot directly obtain the number of read, write, and erase commands executed on the flash memory. Moreover, the storage system needs to implement functions such as flash memory bad block management, error data correction, and wear leveling. Block and storage data error situations are completely random and discrete in time and space. In the absence of control of whether the flash memory is abnormal and the time, location and density of the abnormal occurrence, evaluate the bad block management and error data correction of the storage system, etc. function is pointless

At the same time, the flash memory device allows up to 10,000-100,000 erasing times. Under a certain access load and within a limited time, it is difficult to accurately evaluate the service life of the flash memory device in the system

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