Bi2S3-BaTiO3/PVDF composite material and preparation method thereof

A bi2s3-batio3, composite material technology, applied in fixed capacitor parts, fixed capacitor dielectrics and other directions, can solve the problem of low dielectric constant, and achieve the effects of low inorganic content, good machining performance and simple preparation method

Inactive Publication Date: 2009-05-06
BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem of low dielectric constant existing in traditional dielectric materials, a Bi 2 S 3 -BaTiO 3 /PVDF composite material, the composite

Method used

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  • Bi2S3-BaTiO3/PVDF composite material and preparation method thereof
  • Bi2S3-BaTiO3/PVDF composite material and preparation method thereof
  • Bi2S3-BaTiO3/PVDF composite material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0035] Example 1 Preparation volume percentage f Bi2S3 =0.03 composite material. Specific steps are as follows:

[0036] (1) According to the volume percentage f Bi2S3 =0.03, f BaTiO3 = 0.20, f PVDF =0.77, weigh the raw materials. The volume fraction is replaced by the mass number, the raw materials are 0.0790g, 0.3900g, 0.4620g, and the experimental raw materials are weighed.

[0037] (2) Add the weighed PVDF to 40ml of N,N-dimethylformamide (DMF), and fully dissolve it to form a transparent solution.

[0038] (3) Put the weighed BaTiO 3 And Bi 2 S 3 Nanorods were added to the above transparent solution, and ultrasonically oscillated for 20 minutes to make Bi 2 S 3 , BaTiO 3Evenly dispersed in the solution to form a stable suspension.

[0039] (4) Pour the above-mentioned suspension into a watch glass and place it in an oven at 100°C for drying to obtain a dielectric film.

[0040] (5) Hot press the above dielectric film and test the dielectric properties. Hot pressing conditio...

Example Embodiment

[0042] Example 2: Preparation volume percentage f Bi2S3 =0.12 composite material. Specific steps are as follows:

[0043] (1) According to the volume percentage f Bi2S3 =0.12, f BaTiO3 = 0.20, f PVDF =0.69 Weigh the raw materials. The volume fraction is replaced by the mass number, the raw materials are 0.3160g, 0.3900g, 0.4140g, and the experimental raw materials are weighed.

[0044] (2) Add the weighed PVDF to 30ml of N,N-dimethylformamide (DMF) and fully dissolve it to form a transparent solution.

[0045] (3) Put the weighed BaTiO 3 And Bi 2 S 3 Add to the above transparent solution, ultrasonically shake for 20min, make Bi 2 S 3 , BaTiO 3 Evenly dispersed in the solution to form a stable suspension.

[0046] (4) Pour the above-mentioned suspension into a watch glass and place it in an oven at 100°C for drying to obtain a dielectric film.

[0047] (5) Hot press the above dielectric film and test the dielectric properties. Hot pressing conditions: 210℃, 10MPa, 25min.

[0048]...

Example Embodiment

[0049] Example 3: Preparation volume percentage f Bi2S3 =0.11 composite material. Specific steps are as follows:

[0050] (1) According to the volume percentage f Bi2S3 =0.11, f BaTiO3 = 0.20, f PVDF =0.69 Weigh the raw materials, change the volume fraction to the mass number, the raw materials are respectively: 0.2900g, 0.3900g, 0.4140g, and weigh the experimental raw materials.

[0051] (2) Add the weighed PVDF to 35ml of N,N-dimethylformamide (DMF), and fully dissolve it to form a transparent solution.

[0052] (3) Put the weighed BaTiO 3 And Bi 2 S 3 Add to the above transparent solution, ultrasonically shake for 20min, make Bi 2 S 3 , BaTiO 3 Evenly dispersed in the solution to form a stable suspension.

[0053] (4) Pour the above-mentioned suspension into a watch glass and place it in an oven at 100°C for drying to obtain a dielectric film.

[0054] (5) Hot pressing test dielectric properties. The dielectric film was hot pressed and its dielectric properties were tested. T...

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Abstract

The invention provides a Bi2S3-BaTiO3/PVDF composite material and a preparation method thereof. The material consists of Bi2S3 nano rod, BaTiO3 and PVDF, wherein the volume fraction of the BaTiO3 is 20 percent, the volume fraction of the Bi2S3 is between 3 and 12 percent, and the balance is the PVDF. The preparation method for the material comprises the following steps: raw materials are weighed according to the volume percentage; the weighed PVDF is added into 30 to 40 milliliters of N, N-dimethyl formamide (DMF), and fully dissolved to form a transparent solution; the weighed BaTiO3 and weighed Bi2S3 powder are added into the solution and uniformly dispersed in the solution through supersonic vibration, so as to prepare stable suspension; the suspension is poured into a surface vessel which is then placed into an oven for drying the suspension, and a dielectric film is obtained; and hot pressing is performed, and the dielectric performance is tested. The preparation method prepares the three-phase Bi2S3-BaTiO3/PVDF composite material with superhigh dielectric performance by the simple mixing method, and has the characteristics of simple operation, low cost, good mechanical properties, suitability for industrial production, etc.

Description

technical field [0001] The invention belongs to the technical field of composite materials, and in particular relates to an ultra-high dielectric three-phase composite material and a preparation method thereof. The material is mainly used for preparing capacitors. Background technique [0002] In the electronics industry, polymer matrix composites with high dielectric constant have very broad application prospects. For capacitors that use polymer materials as dielectrics, most of the polymer dielectrics currently used are polymer single-phase materials. Since the relative dielectric constant of polymer materials is relatively low, generally only about 1 to 3, the It produces capacitors with low capacitance density. If a polymer-based composite material with a higher dielectric constant is used, the capacitance density can be increased by dozens or even hundreds of times while keeping the capacitor size unchanged, or the capacitance density can be made The size of the capac...

Claims

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Application Information

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IPC IPC(8): C08L27/16C08K3/30C08K3/24C08J5/18H01G4/06
Inventor 邓元张艳景宋袁曾王广胜杨萌
Owner BEIHANG UNIV
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