Bi2S3-BaTiO3/PVDF composite material and preparation method thereof

A bi2s3-batio3, 1.bi2s3-batio3 technology is used in the preparation of capacitors, ultra-high dielectric three-phase composite materials and their preparation fields, which can solve the problems of low dielectric constant and achieve low inorganic content and mechanical processing performance. Good, simple preparation method

Inactive Publication Date: 2010-12-22
BEIHANG UNIV
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Problems solved by technology

[0004] In order to solve the problem of low dielectric constant existing in traditional dielectric materials, a Bi 2 S 3 -BaTiO 3 / PVDF composite material, the composite material is made of Bi 2 S 3 Nanorods, BaTiO 3 , PVDF composition, where BaTiO 3 Volume fraction is 20%, Bi 2 S 3 The volume fraction is 3% to 12%, and the rest is PVDF

Method used

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  • Bi2S3-BaTiO3/PVDF composite material and preparation method thereof
  • Bi2S3-BaTiO3/PVDF composite material and preparation method thereof
  • Bi2S3-BaTiO3/PVDF composite material and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Embodiment 1 prepares volume percentage f Bi2S3 = 0.03 Composite. Specific steps are as follows:

[0037] (1) According to volume percentage f Bi2S3 =0.03,f BaTiO3 =0.20,f PVDF =0.77, weigh the raw materials. Change the volume fraction into mass number, each raw material is: 0.0790g, 0.3900g, 0.4620g, and weigh the experimental raw materials.

[0038] (2) Add the weighed PVDF into 40ml of N,N-dimethylformamide (DMF), fully dissolve to form a transparent solution.

[0039] (3) The weighed BaTiO 3 and Bi 2 S 3 The nanorods were added to the above transparent solution, and ultrasonically oscillated for 20 minutes to make the Bi 2 S 3, BaTiO 3 Disperses evenly in solution to form a stable suspension.

[0040] (4) Pour the above suspension into a watch glass and then place it in an oven at 100° C. to dry to obtain a dielectric film.

[0041] (5) Hot pressing the above dielectric film and testing the dielectric properties. Hot pressing conditions: 210°C, 10MPa, ...

Embodiment 2

[0043] Embodiment 2: preparation volume percent f Bi2S3 = 0.12 Composite. Specific steps are as follows:

[0044] (1) According to volume percentage f Bi2S3 =0.12,f BaTiO3 =0.20,f PVDF =0.69 Weigh the raw material. Change the volume fraction into mass number, each raw material is: 0.3160g, 0.3900g, 0.4140g, and weigh the experimental raw materials.

[0045] (2) Add the weighed PVDF into 30ml of N,N-dimethylformamide (DMF), fully dissolve to form a transparent solution.

[0046] (3) The weighed BaTiO 3 and Bi 2 S 3 Add to the above transparent solution, ultrasonic vibration for 20min, make Bi 2 S 3 , BaTiO 3 Disperses evenly in solution to form a stable suspension.

[0047] (4) Pour the above suspension into a watch glass and dry in an oven at 100° C. to obtain a dielectric film.

[0048] (5) Hot pressing the above dielectric film and testing the dielectric properties. Hot pressing conditions: 210°C, 10MPa, 25min.

[0049] figure 2 It is the relationship diagra...

Embodiment 3

[0050] Embodiment 3: preparation volume percent f Bi2S3 = 0.11 Composite material. Specific steps are as follows:

[0051] (1) According to volume percentage f Bi2S3 =0.11, f BaTiO3 =0.20, f PVDF =0.69 Weigh the raw materials, change the volume fraction into the mass number, each raw material is respectively: 0.2900g, 0.3900g, 0.4140g, and weigh the experimental raw materials.

[0052] (2) Add the weighed PVDF into 35ml of N,N-dimethylformamide (DMF), fully dissolve to form a transparent solution.

[0053] (3) The weighed BaTiO 3 and Bi 2 S 3 Add to the above transparent solution, ultrasonic vibration for 20min, make Bi 2 S 3 , BaTiO 3 Disperses evenly in solution to form a stable suspension.

[0054] (4) Pour the above suspension into a watch glass and dry in an oven at 100° C. to obtain a dielectric film.

[0055] (5) Dielectric properties tested by hot pressing. The dielectric film was hot-pressed and tested for its dielectric properties, hot-pressing condition...

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Abstract

The invention provides a Bi2S3-BaTiO3 / PVDF composite material and a preparation method thereof. The material consists of Bi2S3 nano rod, BaTiO3 and PVDF, wherein the volume fraction of the BaTiO3 is 20 percent, the volume fraction of the Bi2S3 is between 3 and 12 percent, and the balance is the PVDF. The preparation method for the material comprises the following steps: raw materials are weighed according to the volume percentage; the weighed PVDF is added into 30 to 40 milliliters of N, N-dimethyl formamide (DMF), and fully dissolved to form a transparent solution; the weighed BaTiO3 and weighed Bi2S3 powder are added into the solution and uniformly dispersed in the solution through supersonic vibration, so as to prepare stable suspension; the suspension is poured into a surface vessel which is then placed into an oven for drying the suspension, and a dielectric film is obtained; and hot pressing is performed, and the dielectric performance is tested. The preparation method prepares the three-phase Bi2S3-BaTiO3 / PVDF composite material with superhigh dielectric performance by the simple mixing method, and has the characteristics of simple operation, low cost, good mechanical properties, suitability for industrial production, etc.

Description

technical field [0001] The invention belongs to the technical field of composite materials, and in particular relates to an ultra-high dielectric three-phase composite material and a preparation method thereof. The material is mainly used for preparing capacitors. Background technique [0002] In the electronics industry, polymer matrix composites with high dielectric constant have very broad application prospects. For capacitors that use polymer materials as dielectrics, most of the polymer dielectrics currently used are polymer single-phase materials. Since the relative dielectric constant of polymer materials is relatively low, generally only about 1 to 3, the It produces capacitors with low capacitance density. If a polymer-based composite material with a higher dielectric constant is used, the capacitance density can be increased by dozens or even hundreds of times while keeping the capacitor size unchanged, or the capacitance density can be made The size of the capac...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L27/16C08K3/30C08K3/24C08J5/18H01G4/06
Inventor 邓元张艳景宋袁曾王广胜杨萌
Owner BEIHANG UNIV
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