Phosphosilicate glass growth process and phosphosilicate glass

Abstract

The invention discloses phosphosilicate glass growth technology. The technology adopts high-density plasma to grow phosphosilicate glass through chemical vapor deposition, wherein the ratio of the sputtering bias power to the area of silicon slices during deposition of the phosphosilicate glass is between 2 and 6 W / cm<2>, and the ratio of the molar weight of oxygen to the sum of the molar weight of silicane and the molar weight of phosphorane is between 1.5 and 2. The invention also discloses the phosphosilicate glass grown by the technology, wherein the distance between a bottom starting point of a floriform shell of the phosphosilicate glass and a substrate is more than 40 nanometers. The technology reduces the initial speed of forming the floriform shell of the phosphosilicate glass between figures by selecting proper sputtering bias and proper oxygen flow rate to reduce sputtering energy and the sputtering density, so as to improve the bottom starting point of the floriform shell of the phosphosilicate glass and widen a technological window for selective etching.

Description

technical field [0001] The invention relates to a dielectric film growth process for semiconductor manufacturing and a dielectric film for the semiconductor process, in particular to a growth process for phosphosilicate glass and the phosphosilicate glass grown according to the growth process. Background technique [0002] Dielectric films are widely used in semiconductor technology. Doping phosphorus into silicon dioxide to form phosphosilicate glass can reduce film stress, improve film integrity, and reduce defect density. In addition, phosphosilicate glass also has the function of fixing impurity ions. Phosphosilicate glass is a common dielectric film, and the phosphosilicate glass prepared by high-density plasma chemical vapor deposition has good hole-filling properties. When the concentration of phosphorus is greater than 6%, due to the selectivity of ion sputtering to phosphorus, silicon and oxygen during the high-density plasma chemical vapor deposition process, a fl...

AI Technical Summary

Problems solved by technology

When the starting point of the bottom of the phosphosilicate glass flower-shaped shell is very low, the switching point from low selectivity etching to high selectivity etching is very low, which increases the risk of etching silicon during low selectivity etching, and the process window Shrinking, not conducive to industrial production

Images