Phase changing storage device and its making method
A technology for storage devices and manufacturing methods, applied in information storage, static memory, digital storage information, etc., capable of solving problems such as increasing thermal interference, interfering with bit storage in phase change storage devices, errors, etc.
Inactive Publication Date: 2009-06-10
IND TECH RES INST +4
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Problems solved by technology
However, as the size of memory cells shrinks, the pitch of memory cells also shrinks, which may increase the occurrence of thermal disturbance or thermal cross-talk between phase-change memory cells. , and then disturb the adjacent phase change memory cells during operation and thus cause bit storage errors in the phase change memory device
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[0021] The manufacturing method of the phase change memory device of the present invention will cooperate with Figures 1 to 5 Make a detailed description as follows. Here, the above-mentioned figures only partially show the cross-sections of the multiple memory cells in the phase-change memory device during fabrication, and those skilled in the art should understand that the phase-change memory cells in this embodiment may further include appropriate conductive Components (such as interconnecting plugs or interconnecting wires, etc.) to electrically connect them to an active device (such as a transistor or a diode) and a wire and other components. However, for the purpose of simplifying illustration, these components are not shown in the above drawings.
[0022] Please refer to figure 1 Firstly, a generally prepared phase change memory cell structure is provided, which includes a semiconductor structure 100 . The semiconductor structure 100 includes an active device (not ...
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Abstract
The invention provides a phase-change storage device, which comprises a first conductive electrode, a second dielectric layer, a phase-change material layer, an empty chamber and a second conductive electrode, wherein the first conductive electrode is arranged in a first dielectric layer; the second dielectric layer is arranged on one side of the first dielectric layer; the phase-change material layer is embedded in the second dielectric layer; the phase-change material layer and the first conductive electrode are in electrical connection; the empty chamber is arranged in the second dielectric layer and is between the second dielectric layer and the sidewall of the phase-change material layer to isolate one sidewall of the phase-change material layer from the adjacent second dielectric layer; and the second conductive electrode is stacked on one side of the phase-change material layer and is in electrical connection with the phase-change material layer. The invention also provides a method for manufacturing the phase-change storage device.
Description
technical field [0001] The present invention relates to a memory device and its manufacturing method, in particular to a phase change memory device and its manufacturing method. Background technique [0002] The phase change memory device has the characteristics of non-volatility, high read signal, high density, high erasing cycle and low operating voltage / current, and it is a very potential non-volatile memory. Among them, improving storage density and reducing current density are important technical indicators. [0003] The phase change material used in the storage unit of the phase change memory device can exhibit at least two solid states, including crystalline state and amorphous state. Generally speaking, the operation of phase change memory cells is to use temperature changes to switch between two states. Due to the disordered arrangement of atoms in the amorphous state, it has high resistance, so it can be easily distinguished by simple electrical property measureme...
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IPC IPC(8): H01L45/00H01L27/24G11C11/56
Inventor 涂丽淑
Owner IND TECH RES INST