Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for preparing shallow groove isolation structure

A technology of isolation structure and shallow trench, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as weak adhesion ability and process damage, and achieve the effect of improving adhesion

Inactive Publication Date: 2013-01-23
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The invention provides a method for manufacturing a shallow trench isolation structure, which solves the problem that the bonding ability between the shallow trench isolation oxide structure and the shallow trench in the prior art shallow trench isolation process is weak, and it is easy to be damaged by subsequent processes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing shallow groove isolation structure
  • Method for preparing shallow groove isolation structure
  • Method for preparing shallow groove isolation structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0034] Referring to FIG. 3, an embodiment of the method for manufacturing a shallow trench isolation structure of the present invention includes the following steps:

[0035] Step s1, sequentially forming a pad oxide layer and an etching barrier layer on the semiconductor substrate;

[0036] Step s2, etching the corrosion barrier layer, the pad oxide layer and the semiconductor substrate to form a base with shallow trenches;

[0037] Step s3, forming an adhesive layer covering the surface of the corrosion barrier layer and the inner wall of the shallow trench;

[0038] Step s4, forming an insulating layer covering the adhesive layer and filling the shallow trench;

[0039] Step s5, planarizing the insulating layer and the bonding layer to expose the corrosion barrier layer;

[0040] Step s6, removing the corrosion barrier layer and the pad oxide layer.

[0041] The etching / deposition ratio of the high-density plasma chemical vapor deposition method is 0.08-0.11.

[0042] T...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed is a method for manufacturing a shallow trench isolation structure, the steps of the method comprises forming a shallow trench, forming a gluing layer on the inner wall of the shallow trench, wherein the gluing layer is formed by high-density plasma chemical vapor deposition method with high etching / deposition ratio, and then forming a shallow trench isolation oxide structure on the gluing layer. The method for manufacturing the shallow trench isolation structure can increase the binding property of the shallow trench isolation oxide structure and the shallow trench, thereby avoiding the problem that the shallow trench isolation oxide structure and the shallow trench are easy to be damaged by subsequent technique because the binding capacity of the shallow trench isolation oxidestructure and the shallow trench is relatively weak.

Description

technical field [0001] The invention relates to a method of making a shallow trench isolation structure. Background technique [0002] Methods for forming isolation regions mainly include local oxidation isolation process (LOCOS) or shallow trench isolation process (STI). The LOCOS process is to deposit a layer of silicon nitride on the surface of the wafer, and then perform etching to oxidize and grow silicon oxide in part of the recessed area, and the active device is generated in the area determined by the silicon nitride. However, there is a phenomenon of "bird's beak" (bird's beak) growing on the edge of silicon nitride in the local oxidation isolation. As shown in Figure 1, this "bird's beak" occupies the actual space and increases the volume of the circuit. Therefore, the LOCOS process is only suitable for the design and manufacture of large-scale devices. [0003] As the semiconductor technology enters the deep submicron era, the active region isolation layer of th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/762H01L21/31
Inventor 刘明源张文广郑春生
Owner SEMICON MFG INT (SHANGHAI) CORP