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High piezoelectric strain constant d31, low piezoelectric strain constant g31 piezoelectric ceramic material and preparation thereof

A technology of strain constant and voltage constant, applied in the direction of piezoelectric/electrostrictive/magnetostrictive devices, circuits, electrical components, etc., can solve the problems that restrict the performance of dual-chip actuating components, and achieve excellent performance

Active Publication Date: 2009-07-08
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, at home and abroad, the d of piezoelectric ceramic materials 31 relatively low, while g 31 is relatively high, as shown in Table 1, thus restricting the performance of the piezoceramic bimorph actuating element

Method used

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  • High piezoelectric strain constant d31, low piezoelectric strain constant g31 piezoelectric ceramic material and preparation thereof
  • High piezoelectric strain constant d31, low piezoelectric strain constant g31 piezoelectric ceramic material and preparation thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] with Pb 3 o 4 (industrial pure), ZrO 2 (industrial pure), TiO 2 (industrial pure), SrCO 3 (industrial pure), BaCO 3 (industrial pure), Nb 2 o 5 (industrial pure), La 2 o 3 (chemically pure), MgCO 3 (industrial pure), Sb 2 o 3 (industrial pure), SiO 2 (chemically pure) as raw material, according to 0.3715PbZrO 3 +0.2885PbTiO 3 +0.25Pb(Mg 1 / 3 Nb 2 / 3 )O 3 +0.04SrTiO 3 +0.03BaTiO 3 +0.02LaTiO 3 +0.05wt.% SiO 2 +0.02wt.%Nb 2 o 5 +0.04wt.%Sb 2 o 3Stoichiometric weighing, with deionized water and agate balls as the medium, after barrel milling for 8 hours, after discharging and drying, perform the first stage of briquette synthesis at 650°C / 2h, and then carry out the second stage at 850°C / 2h Synthesis, after pulverization, barrel milling for 24 hours, discharge drying, adding binder, granulation molding (molding pressure is 150MPa), plastic discharge (800℃ / 1h), oxygen sintering (1280℃ / 2), cold processing , ultrasonic cleaning, upper electrode, polariza...

Embodiment 2

[0022] with Pb 3 o 4 (industrial pure), ZrO 2 (industrial pure), TiO 2 (industrial pure), SrCO 3 (industrial pure), BaCO 3 (industrial pure), MgCO 3 (industrial pure), Nb 2 o 5 (industrial pure), La 2 o 3 (chemically pure), SiO 2 (chemically pure) is raw material, and preparation technology is with embodiment 1, according to 0.3715PbZrO 3 +0.2685PbTiO 3 +0.25Pb(Mg 1 / 3 Nb 2 / 3 )O 3 +0.05SrTiO 3 +0.04BaTiO 3 +0.02LaTiO 3 +0.02wt.% SiO 2 +0.04wt.%La 2 o 3 +0.03wt.%Nb 2 o 5 chemical formulations for preparation. The main performance of the obtained material standard sheet is d 33 =943pC / N,:d 31 =-377pC / N, ε 33 T / ε o =6720,g 31 =-6.33,k 31 =0.41;

Embodiment 3

[0024] with Pb 3 o 4 (industrial pure), ZrO 2 (industrial pure), TiO 2 (industrial pure), SrCO 3 (industrial pure), BaCO 3 (industrial pure), MgCO 3 (industrial pure), Nb 2 o 5 (industrial pure), SiO 2 (chemically pure) is raw material, and preparation technology is with embodiment 1, according to 0.372PbZrO 3 +0.258PbTiO 3 +0.25Pb(Mg 1 / 3 Nb 2 / 3 )O 3 +0.10SrTiO 3 +0.02BaTiO 3 +0.03wt.% SiO 2 +0.04wt.%Nb 2 o 5 chemical formulations for preparation. The main properties of material standard sheets are: d 33 =974pC / N,d 31 =-388pC / N, ε 33 T / ε o =7000, g 31 =-6.26,k 31 =0.42;

[0025] Table 1 The present invention compares with prior art

[0026]

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Abstract

The invention relates to a piezoelectric ceramic material with a high-pressure electric strain constant d31 and a low-pressure electric strain constant g31 and a preparation method thereof, and belongs to the filed of ceramic composition and preparation. The chemical general formula of the piezoelectric ceramic material is xPbZrO3+yPbTiO3+zPb(Mg1 / 3Nb2 / 3)O3+mSrTiO3+nBaTiO3+pLaTiO3+awt.percent SiO2+bwt.percent La2O3+cwt.percent Nb2O5+dwt.percent Sb2O3, wherein x is between0.2 and 0.5, y is between0.2 and 0.5, z is between 0.1 and 0.4, m is between 0.0 and 0.10, n is between 0.0 and 0.10, p is between 0.0 and 0.10, a is between 0 and 0.5, b is between0 and 0.5, c is between 0 and 0.5, and d is between 0 and 0.5. The piezoelectric ceramic material is prepared through improvement on the basis of the prior piezoelectric ceramic technology. The main properties of a standard material plate are as follows: d33 is equal to 974pC / N, d31 is equal to -388pC / N, epsilon33 / epsilon o is equal to 7,000, g31 is equal to -6.26, and k31 is equal to 0.42. The material has high piezoelectric strain constant d31 and low piezoelectric voltage constant g31, and is a piezoelectric ceramic double-wafer driving material with superior properties. A piezoelectric ceramic double-wafer actuating element prepared from the material is provided to the China Braille Publishing House and used for manufacturing a Braille electronic display; double-wafer endpoints have large displacement, strong strength and good stability, and the blind has obvious hand feeling; and the Braille electronic display completely replaces imported products of the same type.

Description

technical field [0001] The invention relates to a high voltage electric strain constant d 31 , low voltage voltage constant g 31 A piezoelectric ceramic material and a preparation method thereof belong to the field of ceramic composition and preparation. Background technique [0002] With the development of modern science and technology, the application of piezoelectric ceramics is getting deeper and wider. Piezoelectric bimorph actuators can be applied to jacquard needle selection actuators, Braille electronic displays (touch screens), etc. Piezoelectric ceramic sheets with the same polarity are glued together, and the circuit is connected in parallel, such as figure 1 As shown in (a), or glue two piezoelectric ceramic sheets with opposite polarities together, and connect them in series in the circuit, such as figure 1 As shown in (b), under the excitation of the electric field, when one of the sheets stretches at a certain moment, the other sheet shrinks, causing the pi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/472C04B35/49C04B35/491C04B35/495C04B35/14C04B35/50C04B35/622H01L41/187H10N30/853
Inventor 李玉臣姚烈董显林梁瑞虹
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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