Power diode with trench field ring structure

Abstract

The invention relates to a power semiconductor component comprising a semiconductor base body having a first doping and a method of producing the same. In the base body having the first doping, a pn junction is formed by means of a contact region having a second doping with a first doping profile. A field ring structure having a second doping with a second doping profile of the respective field ring is likewise arranged. In this case, the contact region and the field ring structure are arranged at respectively assigned first and second partial areas of a first surface of the base body. Both the contact region and the field ring structure extend into the volume of the base body, wherein the base body has, for the field ring structure, a trench-type cutout assigned to the respective field ring, the surface of the cutout essentially following the contour of the assigned doping profile, the depth extent of the trenches in the contact region and the field ring structure is a maximum of about 90 percent and a minimum of about 50 percent of the penetration depth of the second doping, and the penetration depth of the second doping is between about 10 [mu]m and about 30 [mu]m.

Description

technical field [0001] The invention describes a power semiconductor component having at least one pn junction, preferably a power diode with a reverse voltage strength of at least 600V, for use in a power stage converter. The main requirement for such power semiconductor components is therefore the edge region which contributes to this reverse voltage strength. Background technique [0002] According to the prior art, in order to meet this requirement it is known to arrange a concentric structure consisting of a plurality of field rings in the edge region of the power semiconductor component. In this case, it is known that such field rings are produced by a diffusion process in which a mask of dopant is applied to the surface and then diffuses into the semiconductor as a result of the temperature action, whereby the diffusion profile is formed. For power semiconductor components capable of bulk conduction, field rings are usually formed in this case together with the creat...

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Problems solved by technology

[0003]Because here the deep diffusion of dopants requires very long diffusion times and thus there is a risk that the diffusion zone will be contaminated, for example with heavy metals

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