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Method and system for testing indirect bandgap semiconductor devices using luminescence imaging

A technology of semiconductor and light-emitting images, which is applied in semiconductor devices, semiconductor/solid-state device testing/measurement, photometry, etc., and can solve problems such as reducing the efficiency of solar cells

Inactive Publication Date: 2009-07-22
BT IMAGING PTY LTD
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  • Abstract
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  • Claims
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Problems solved by technology

Locally enhanced contact resistance reduces solar cell efficiency

Method used

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  • Method and system for testing indirect bandgap semiconductor devices using luminescence imaging
  • Method and system for testing indirect bandgap semiconductor devices using luminescence imaging
  • Method and system for testing indirect bandgap semiconductor devices using luminescence imaging

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Embodiment Construction

[0030] Embodiments of methods and systems for electroluminescent and photoluminescent imaging of indirect bandgap semiconductor devices are described below. Although certain embodiments have been described with specific reference to solar cells, it is not intended that the invention be limited to such devices, as the principles of the invention have general applicability to optoelectronic devices and / or semiconductor devices and structures, which may all or partially processed.

[0031] In the context of this specification, references to electrically isolated or poorly connected areas are intended to include partially electrically isolated areas within the intended meaning. For example, electrically isolated or poorly connected regions include regions that resistively couple to other regions.

[0032] The methods used to optically inspect or test indirect bandgap semiconductor devices such as optoelectronic devices and solar cells differ in the way the devices are excited. I...

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Abstract

Embodiments of methods and systems for identifying or determining spatially resolved properties in indirect bandgap semiconductor devices such as solar cells are described. In one embodiment, spatially resolved properties of an indirect bandgap semiconductor device are determined by externally exciting the indirect bandgap semiconductor device to cause the indirect bandgap semiconductor device toemit luminescence (110), capturing images of luminescence emitted from the indirect bandgap semiconductor device in response to the external excitation (120), and determining spatially resolved properties of the indirect bandgap semiconductor device based on a comparison of relative intensities of regions in one or more of the luminescence images (130).

Description

[0001] related application [0002] This application claims the benefit of Australian Provisional Patent Application No. 2006902366 filed 5 May 2006 and is incorporated by reference in its entirety. technical field [0003] The present invention relates generally to semiconductor testing using luminescence imaging, and more particularly to testing of indirect bandgap semiconductor devices such as silicon solar cells. Background technique [0004] The production of solar cells begins with bare semiconductor wafers, such as silicon wafers. During production, metal patterns or grids are usually applied to the wafer by screen printing or buried contact processes. The purpose of the metal pattern or grid is to collect the current generated in response to excitation of the semiconductor structure of the solar cell by an external illumination source. The metal grid typically includes a plurality of fingers electrically connected to one or more bus bars. [0005] For efficiency r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J1/00G01N21/00H01L21/66
CPCG01N21/64H01L31/022425G01N21/6489G01N21/9501G01N21/956G01N21/66Y02E10/50H02S50/15
Inventor T·特鲁科R·A·巴多斯
Owner BT IMAGING PTY LTD
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