Method for simultaneously reading and writing memory and data acquisition unit

A simultaneous read and write, random access memory technology, applied in the fields of computer, electronic technology and communication, can solve the problem of device acquisition speed limit, etc., to avoid conflicts between reading and writing, no conflicts between reading and writing, and improve the speed

Active Publication Date: 2009-07-29
武汉中岩科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When using the traditional access method, it is necessary to wait for all the data to be cac...

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  • Method for simultaneously reading and writing memory and data acquisition unit
  • Method for simultaneously reading and writing memory and data acquisition unit
  • Method for simultaneously reading and writing memory and data acquisition unit

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Embodiment Construction

[0023] A detailed description will be given below of embodiments of the present invention. While the invention will be described in conjunction with examples, it will be understood that it is not intended to limit the invention to these examples. On the contrary, alternatives, modifications and equivalents are defined within the various scopes of the present invention. The technical solution of the present invention will be described in detail with reference to the drawings and specific embodiments, so as to make the characteristics and advantages of the present invention more obvious.

[0024] Embodiments described herein will be described in conjunction with generally conceptual computer-executable instructions. Computer-executable instructions refer to computer-usable media, such as program modules, that can be executed by one or more computers or other similar devices. Generally, program modules include routines, objects, components, data structures, etc. that perform pa...

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Abstract

The invention discloses a method for simultaneously reading and writing a memory and a data acquisition device thereof. The method comprises the following steps of: dividing the memory into 2-128 segment memory space sections; setting sampling parameters and starting read/write high bit address; writing acquired data into the memory space section corresponding to the current write high bit address; setting the identifier of the memory space section readable after the acquisition is completed; changing the write high bit address of the current memory section; reading data in the memory space section corresponding to the read high bit address; setting the identifier of the memory space section writable after the reading is completed; and changing the read high bit address of the current memory space section. The device comprises a sensor, a double-end random access memory, a signal processing unit, an A/D converting unit, a control logic, and an USB interface chip. With the segmented buffer storage, the invention can read data while storing data, avoids the read/write conflict on the memory, thereby reducing the time of reading and writing data and improving the speed of data acquiring of the device.

Description

technical field [0001] The present invention relates to the fields of computer, electronic technology and communication, and more specifically relates to a method for simultaneously reading and writing memory, and also relates to a device for simultaneously reading and writing memory. Measuring instruments and various data acquisition devices. Background technique [0002] Data acquisition devices are widely used in production and life. Often a series of data needs to be collected rather than just one data. At this time, the data collected by the sensor is cached in the memory one by one first, and then the cached data is read out from the memory after all the data is collected. Since all data must be written into the memory before it can be read, the speed of data acquisition is greatly limited. [0003] The memories used in the data acquisition device in the prior art mainly include static random access memory (SRAM), dual-port random access memory (DPRAM) and first-in-...

Claims

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Application Information

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IPC IPC(8): G06F3/06G01D5/00
Inventor 李长林胡纯军钱建安张杰孙东宁
Owner 武汉中岩科技股份有限公司
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