X ray sensor and manufacturing method thereof

Abstract

The invention provides an X ray sensor and a preparation method thereof. The sensor comprises: a substrate with a photoinduction area, a first graphic conductive layer which at least comprises a grid arranged in the photoinduction area, a grid dielectric layer, a graphic semi-conductive layer, a second graphic conductive layer which at least comprises a source cathode and a drain electrode, a dielectric layer which is provided with a first via hole exposing part of the drain electrode, a third graphic conductive layer which comprises a lower conductive electrode arranged in the photoinductionarea and is connected with the drain electrode through the first via hole, a graphic silicon-rich dielectric layer, a graphic transparent conductive layer, a protective layer covering the graphic transparent conductive layer, and a flickering luminescent layer arranged on the protective layer and aligned to the graphic silicon-rich dielectric layer. The sensor takes silicon-rich dielectric material as a photoinduction layer to increase photosensitivity. The sensor and the method can use less photo etching in an etching technology and reduce the total thickness of a film so as to reach the purpose of simplifying the technology and reducing cost.

Description

X-ray sensor and manufacturing method thereof technical field The present invention relates to an X-ray (X-ray) sensor and a method for manufacturing the X-ray sensor, especially to a silicon-rich (silicon-rich, Si-rich) dielectric layer as a photosensitive Materials for X-ray sensors and methods for their fabrication. Background technique Compared with the traditional film-type X-ray photosensitive system, the digital X-ray planar indirect sensing system has the advantages of low radiation dose, fast electronic image formation, and easy image inspection, reproduction, capture, transmission and analysis. Image development trends. The digital X-ray planar indirect sensing system includes an array of sensing pixels, and each sensing pixel includes a thin film transistor (thinfilm transistor, TFT), a photosensitive element, and a luminescent material that converts X-rays into visible light. The photosensitive element of the traditional digital X-ray planar indirect sensing ...

AI Technical Summary

Problems solved by technology

One of the objectives of the present invention is to provide an X-ray sensor using a silicon-rich dielectric material as a photosensitive element, so as to solve the problems caused by the integration of components such as PIN diodes and thin film transistors in the process technology of known X-ray sensors. Cause problems such as complicated process and high cost

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