Quantization Hall resistance element containing multilayer two-dimension electron gas and method for producing the same
A technology of two-dimensional electron gas and two-dimensional electron gas layer, which is applied in the manufacture/processing of Hall-effect devices, magnetic field-controlled resistors, and electromagnetic devices, etc. Changes and other issues to achieve the effect of reducing the scale and consumption of epitaxial wafer materials, reducing Hall resistance, and enhancing reliability
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[0037] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0038] The present invention extends the concept of parallel connection from the plane direction of epitaxial wafers to the direction of epitaxial growth, that is, using epitaxial wafers containing multiple layers of two-dimensional electron gas, that is, growing on the substrate at one time during the growth process of epitaxial wafers For multi-layer two-dimensional electron gas, other device manufacturing processes except for the epitaxial growth process are compatible with single-layer two-dimensional electron gas epitaxial wafers. A three-dimensional quantized Hall series-parallel array can be fabricated by introducing parallel connections in the epitaxial growth direction.
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