Preparation method of induced texture ferroelectric film at buffer layer

A ferroelectric thin film and buffer layer technology, applied in the field of ferroelectric thin film preparation, can solve the problems of poor performance of ferroelectric thin films, achieve good dielectric and piezoelectric properties, reduce formation and accumulation, and achieve good performance

Inactive Publication Date: 2009-09-23
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the problem of poor performance of the ferroelectric thin film prepared by the existing method, and to provide a preparation method of the buffer layer induced texture ferroelectric thin film

Method used

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  • Preparation method of induced texture ferroelectric film at buffer layer
  • Preparation method of induced texture ferroelectric film at buffer layer
  • Preparation method of induced texture ferroelectric film at buffer layer

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specific Embodiment approach 1

[0009] Specific embodiment one: the preparation method of the buffer layer induced texture ferroelectric thin film of the present embodiment is carried out according to the following steps: 1. According to the ratio of parts by weight, 1.6 to 2 parts of lanthanum nitrate, 1 to 1.2 parts of nickel acetate and 10 to 10 parts of 30 parts of ethylene glycol methyl ether were mixed, then stirred and heated until completely dissolved; namely, to obtain LaNiO 3 Buffer layer sol; 2. Add the buffer layer sol dropwise on the substrate, spin coating at 1000-2000r / min for 5-15s, then spin-coat at 3500-4500r / min for 15-25s, and keep warm at 300-450°C for 4- 5min, then annealed at 600-800°C for 5-15min, and cooled to room temperature to form a buffer layer film; 3. Add ferroelectric oxide sol onto the buffer layer film, and spin coat at 1000-2000r / min for 5- 15s, spin coating at 3500-4500r / min for 15-25s, keep warm at 300-450°C for 4-5 minutes, then anneal at 600-800°C for 5-15 minutes, coo...

specific Embodiment approach 2

[0011] Specific embodiment two: the difference between this embodiment and specific embodiment one is that in step one, 1.7 to 1.9 parts of lanthanum nitrate, 1.05 to 1.15 parts of nickel acetate and 15 to 25 parts of ethylene glycol methyl Ether mixed, then stirred and heated until completely dissolved; that is, LaNiO 3 Sol. Other steps and parameters are the same as those in Embodiment 1.

specific Embodiment approach 3

[0012] Specific embodiment three: the difference between this embodiment and specific embodiment two is that in step one, 1.8 parts of lanthanum nitrate, 1.2 parts of nickel acetate and 20 parts of ethylene glycol methyl ether are mixed according to the ratio of parts by weight, and then stirred and heated until completely dissolved; that is, to obtain LaNiO 3 Sol. Other steps and parameters are the same as in the second embodiment.

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Abstract

A preparation method of induced texture ferroelectric film at buffer layer relates to a preparation method of ferroelectric film. The invention solves the problem of bad performance of ferroelectric film prepared and obtained in the existing method. The method is as follows: firstly, LaNiO3 buffer layer sol is prepared; secondly, a buffer layer film is obtained after spin coating, heat preservation and annealing; thirdly, ferroelectric oxide sol is dropped on a substrate to obtain the ferroelectric film after spin coating, heat preservation and annealing. The ferroelectric film prepared and obtained by the invention has good dielectricity and piezoelectric performance; the manufacturing technology in the invention is simple; the ferroelectric film manufactured and obtained by the invention is compatible with integrated devices in silicon technology, and has good application prospect.

Description

technical field [0001] The invention relates to a preparation method of a ferroelectric thin film. Background technique [0002] Relaxor ferroelectric ceramics are a very attractive material among functional ceramics. With the rapid development of electronic information technology, the demand for multilayer ceramic capacitors, ceramic micro-displacement devices and drivers, and micro-electro-optical machinery is increasing day by day. The main reason and background for the rapid development of relaxor ferroelectric ceramics. In addition, with the development of ferroelectric storage technology, micro-optoelectronic machinery and ferroelectric integrated electronics, the research on the preparation and application of ferroelectric thin films has become a very important and active field in the current research of new materials. In the research process of ferroelectric thin films, it is found that the electrodes have a great influence on the performance of the thin films. At p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/491C04B35/472C04B35/624
Inventor 王文冯明周玉贾德昌柯华
Owner HARBIN INST OF TECH
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