Explosion-proof module structure for power components, particularly power semiconductor components, and production thereof

Abstract

The invention relates to power modules, particularly power modules comprising at least one electric power component, especially a power electronic semiconductor component (1). An electrical contact for a load current is created on a lower surface and an upper surface of said power semiconductor component (1). In order to reduce an explosion pressure and accept power when the power electronic semiconductor component (1) is overloaded, a hollow space (7) that is filled with at least one electrically conducting particle (5) is formed on an electrical contact surface (9) of the electrical contact. In case of a short circuit, an arc is initially generated above the semiconductor element thickness of the power semiconductor component (1), whereupon the filling in the hollow space (7) takes overcurrent conduction. Preferably, the filling in the hollow space (7) is embodied as a plurality of spherical electrically conducting particles (5). The explosion pressure can escape into the interstices in the filling in case of a short circuit. Furthermore, metal vapors are cooled and are condensed. A duct extending from the hollow space (7) out of the hollow space (7) can additionally be createdin order to reduce the explosion pressure, thus preventing power components from demolishing the surroundings thereof during an electrical overload. The invention makes it possible to improve a thyristor, for example.

Description

Technical field [0001] The invention relates to all power modules having at least one electric power device, especially an electronic power semiconductor device. Power devices are all electrical devices or electronic devices that can be used for high current or high power. Then, an electronic power semiconductor device exemplified for all possible power devices is explained. Background technique [0002] In a conventional manner, power modules, in particular modules with power semiconductor components, are contacted by means of bonding. Power semiconductor modules especially have electronic power semiconductor components. Such electronic power semiconductor devices are used to generate controllable energy for large consumers, and can connect large load currents. Power semiconductors must be protected from overvoltage, excessive voltage rise speed, short circuit, excessive current rise speed, and thermal overload. Especially when a short circuit occurs in the consumer, the ele...

AI Technical Summary

Problems solved by technology

Although this limits the voltage at which the arc is driven, the other power semiconductors overheat in this case, since these power semiconductors have a high conduction voltage when controlled via the collector potential

This causes all parallel connected power semiconductors to be destroyed until the current is completely interrupted

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