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Method for welding target material and back board

A welding method and backplate technology, which is applied in the direction of welding medium, welding equipment, welding/welding/cutting items, etc., can solve the problems of affecting the welding effect of target components and the easy oxidation of tantalum targets, so as to improve the bonding strength of brazing , Improve the effect of infiltration and fusion

Active Publication Date: 2012-07-04
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The problem to be solved by the present invention is to provide a welding method of the target and the back plate, which solves the problem that the tantalum target is easily oxidized and difficult to infiltrate and fuse with the brazing material in the brazing process, which affects the welding effect of the obtained target assembly

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  • Method for welding target material and back board
  • Method for welding target material and back board
  • Method for welding target material and back board

Examples

Experimental program
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Effect test

Embodiment 1

[0040] The following are the process steps and welding results of brazing the 99.99% high-purity Ta target and the 6061Al alloy back plate:

[0041] (1) Form a metal interlayer on the surface of the target: use plasma spraying technology to form a metal interlayer on the welding side of the Ta target, specifically, use the plasma arc driven by direct current as the heat source, and use Cu or Ni-Cr alloy, etc. The material soaked with solder is heated to a molten or semi-molten state, and sprayed at a high speed to the surface of the pretreated Ta blank to form a firmly adhered metal layer with a thickness of 400um.

[0042] (2) Surface processing of the target material and the back plate: Machining the surface of the Ta target and the surface of the 6061Al alloy back plate to make them bright, and the smoothness reaches 0.2-1.6um.

[0043] (3) Chemical cleaning of the target material and the back plate: the Ta target is first cleaned with an acid solution, and then cleaned wit...

Embodiment 2

[0052] The following are the process steps and welding results of brazing the 99.995% high-purity Ta target and the ZL105 aluminum alloy back plate:

[0053] (1) Form a metal interlayer on the surface of the target: use plasma spraying technology to form a metal interlayer on the welding side of the Ta target, specifically, use the plasma arc driven by direct current as the heat source, and use Cu or Ni-Cr alloy, etc. The material soaked with solder is heated to a molten or semi-molten state, and sprayed at high speed to the surface of the pretreated Ta blank to form a firmly adhered metal layer with a thickness of 200um.

[0054] (2) Surface processing of the target material and the back plate: Machining the surface of the Ta target and the surface of the ZL105 aluminum alloy back plate to make them bright, and the smoothness reaches 0.2-1.6um.

[0055] (3) Chemical cleaning of the target material and the back plate: the Ta target is first cleaned with an acid solution, and t...

Embodiment 3

[0064] The following are the process steps and results of brazing the 99.99% high-purity Ta target and the brass back plate:

[0065] (1) Form a metal interlayer on the surface of the target: use plasma spraying technology to form a metal interlayer on the welding side of the Ta target, specifically, use the plasma arc driven by direct current as the heat source, and use Cu or Ni-Cr alloy, etc. The material soaked with solder is heated to a molten or semi-molten state, and sprayed at high speed to the surface of the pretreated Ta blank to form a firmly adhered metal layer with a thickness of 200um.

[0066] (2) Surface processing of the target material and the back plate: Machining the surface of the Ta target and the surface of the brass back plate to make them bright, and the smoothness reaches 0.2-3.2um.

[0067] (3) Chemical cleaning of the target material and the back plate: the Ta target is first cleaned with an acid solution, and then cleaned with an organic solvent; an...

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Abstract

A method for welding a target material and a back board includes a step of providing a tantalum target material and a back board; a step of forming a metal central layer on a welding surface containing the tantalum target material; a step of adding solder on a welding surface of the back board; a step of welding the tantalum target material to the back board to form a target material component bybrazing, heating and fusing the solder; a step of implementing thermal insulation and heat diffusion treatment; and a step of cooling the target material component, and removing the redundant solder through a mechanical treatment. The invention improves a problem that a welding workpiece and the solder are difficult to infiltrate by the metal central layer, the bonding strength between the tantalum target material and the back board is improved effectively, the tantalum target material will not be unhitched during a sputtering process, and a sputter coating may be implemented normally.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a welding method of a target material and a back plate. Background technique [0002] In the semiconductor industry, a target assembly is composed of a target that meets the sputtering performance and a back plate that is combined with the target and has a certain strength. The back plate can play a supporting role when the target assembly is assembled to the sputtering base, and has the effect of conducting heat. At present, metal tantalum (Ta) is mainly used as a target material to be coated by physical vapor deposition (PVD) and a barrier layer is formed, and magnetron sputtering is used in the sputtering process; High copper or aluminum material is used as the backplane material. [0003] The high-purity tantalum target and the back plate of copper or aluminum alloy are processed and welded to form the target components used in the semiconductor industry, and then...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K1/00B23K1/20C23C4/08B23K35/30B23K35/28B23K35/26B23K35/24C23G1/10C23G5/02C23C14/34B23K103/10B23K103/12B23K103/18B23K103/08C23C4/134
Inventor 姚力军潘杰陈勇军刘庆
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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