Welding method of target materials and back plates

A welding method and a technology of a back plate, which are applied in the direction of welding medium, welding equipment, welding/welding/cutting items, etc., can solve problems such as easy oxidation of copper targets and affect the welding effect of target components, so as to improve the bonding strength of brazing , Improve the effect of infiltration and fusion

Inactive Publication Date: 2010-02-17
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The problem to be solved by the present invention is to provide a welding method for the target material and the back plate, to solve the problem that the copper target material is easily oxidized and difficult to infiltrate and fuse with the brazing material in the brazing process, which affects the welding effect of the obtained target material assembly

Method used

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  • Welding method of target materials and back plates
  • Welding method of target materials and back plates
  • Welding method of target materials and back plates

Examples

Experimental program
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Effect test

Embodiment 1

[0041] The following are the process steps and welding results for brazing a 99.9999% high-purity Cu target and 6061Al alloy backplane:

[0042] (1) Forming a metal intermediate layer on the surface of the target: Plasma spraying technology is used to form a metal intermediate layer on the welding side of the Cu target. Specifically, a plasma arc driven by a direct current is used as a heat source to easily convert Cu or Ni-Cr alloys. The material infiltrated with the brazing filler metal is heated to a molten or semi-molten state, and sprayed on the surface of the pretreated Cu billet at a high speed to form a firmly attached metal layer with a thickness of 400um.

[0043] (2) Surface processing of the target and back plate: the Cu target surface and the surface of the 6061Al alloy back plate are machined to make them bright, and the smoothness reaches 0.2um to 1.6um.

[0044] (3) Chemical cleaning of targets and backplanes: the Cu target is first cleaned with acid solution and then...

Embodiment 2

[0053] The following are the process steps and welding results of brazing 99.9999% high purity Cu target and ZL105 aluminum alloy backplane:

[0054] (1) Forming a metal intermediate layer on the surface of the target: Plasma spraying technology is used to form a metal intermediate layer on the welding side of the Cu target. Specifically, a plasma arc driven by a direct current is used as a heat source to easily convert Cu or Ni-Cr alloys. The material infiltrated with the brazing filler metal is heated to a molten or semi-molten state, and sprayed at a high speed to the surface of the pretreated Cu billet to form a firmly attached metal layer with a thickness of 200um.

[0055] (2) Surface processing of the target and backplane: The surface of the Cu target and the surface of the ZL105 aluminum alloy backplane are machined to make them bright, and the finish can reach 0.2um to 1.6um.

[0056] (3) Chemical cleaning of the target and backplane: first clean the Cu target with acid solu...

Embodiment 3

[0065] The following are the process steps and results of brazing 99.9999% high-purity Cu target and brass backing plate:

[0066] (1) Forming a metal intermediate layer on the surface of the target: Plasma spraying technology is used to form a metal intermediate layer on the welding side of the Cu target. Specifically, a plasma arc driven by a direct current is used as a heat source to easily convert Cu or Ni-Cr alloys. The material infiltrated with the brazing filler metal is heated to a molten or semi-molten state, and sprayed at a high speed to the surface of the pretreated Cu billet to form a firmly attached metal layer with a thickness of 200um.

[0067] (2) Surface processing of the target and back plate: The surface of the Cu target and the surface of the brass back plate are machined to make them bright, and the finish can reach 0.2um to 3.2um.

[0068] (3) Chemical cleaning of the target and back plate: the Cu target is cleaned with acid solution first, and then with organi...

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Abstract

The invention related to a welding method of target materials and back plates, which comprises the following steps: providing a copper target material and a back plate; forming a metal intermediate layer on a welding surface of the copper target material; adding a brazing filler metal on the welding surface of the back plate; welding the copper target material to the back plate to form a target material assembly by soldering, heating and melting the brazing filler metal; then carrying out heat preservation and thermal diffusion processing; and cooling the target material assembly, and removingthe redundant brazing filler metal through machining. The invention improves the problem of difficult soakage of weld workpieces and brazing filler metals through the metal intermediate layer, and effectively improves the bonding strength between the copper target material and the back plate; the copper target material can not be disconnected in a sputtering process, and sputter coating can be normally carried out.

Description

Technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a welding method of a target material and a back plate. Background technique [0002] In the semiconductor industry, the target assembly is composed of a target that meets the sputtering performance and a back plate that is combined with the target and has a certain strength. The back plate can support the assembly of the target assembly to the sputtering base, and has the function of conducting heat. At present, metal copper (Cu) is mainly used to coat the film by physical vapor deposition (PVD) and form a barrier layer as a target. Magnetron sputtering is used in the sputtering process; it needs to be used with sufficient strength, and thermal conductivity and electrical conductivity are relatively high. High copper or aluminum materials are used as backplane materials. [0003] The high-purity copper target material and the copper or aluminum alloy backplane are processed...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K1/00B23K1/20C23C4/12C23C4/08B23K35/30B23K35/28B23K35/26B23K35/24C23G1/10C23G5/032C23C14/34B23K103/12B23K103/18B23K103/10
Inventor 姚力军王学泽欧阳琳陈勇军刘庆
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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