Method for preparing masking microstructure
A microstructure and microgroove technology, applied in microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve the problems of relying on etching equipment, difficult processing, complex preparation process, etc., to optimize the surface of silicon wafers Mask and micro-groove passivation process, eliminating the need to adjust process parameters, and avoiding the effects of dependence
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[0028] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:
[0029] Taking the preparation process of microchannel as an example, the preparation steps are as follows: figure 1 shown, including:
[0030] 1. Thick silicon oxide mask preparation:
[0031] Thick silicon oxide is grown by thermal oxidation, with a thickness of 1 μm, such as figure 1 as shown in (a);
[0032] 2. Etching microgrooves:
[0033] Photolithography, and then etch the plane pattern of the microgroove, the opening width of the microgroove is 3 μm, and the silicon is deeply etched 8 μm, such as figure 1 as shown in (b);
[0034] 3. Surface passivation:
[0035] LPCVD deposited silicon dioxide with a thickness of 250nm, such as figure 1 as shown in (c);
[0036] 4. Etching the bottom mask of the microgroove
[0037] RIE anisotropically etches the silicon dioxide at the bottom of the microgroove, such as figure 1 as shown in (d...
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