Semiconductor device and manufacturing method thereof

Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. The manufacturing method mainly comprises the following steps: forming a weld pad on a substrate by wet etching, turning over an acting surface to form a semiconductor chip with a plurality of connection convex blocks, and connecting the semiconductor chip onto the weld pad of the substrate by the connection convex blocks, wherein, the temperature for press fitting the connection convex blocks and the weld pad is lower than melting points of the weld pad and the connection convex blocks, so that the semiconductor chip and the substrate fit each other by the weld pad by the connection convex blocks in a press fitting way for electrical connection to increase joint strength between the weld pad and the connection convex blocks, and improve reliability of manufacturing processes.

Description

technical field [0001] The present invention relates to a semiconductor device and its manufacturing method, in particular to a flip-chip semiconductor device and its manufacturing method. Background technique [0002] Semiconductor devices are used in communications, networks, computers, home appliances, business machines, cameras, and even game machines. The demand is growing rapidly in various fields from industrial machines to peripheral tools and portable machines. With the rapidly growing demand, in addition to the miniaturization, multi-pin, and thinning of semiconductor devices, the other side cannot stop the need to suppress the deterioration of functions for miniaturization, multi-pin, and thinning. Or the cost becomes higher, so higher performance and lower cost are strongly desired. [0003] In order to achieve the above-mentioned miniaturization, thinning, and multi-pin goals, it is necessary to develop a method that does not require gold wires from the existin...

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Problems solved by technology

[0005] The wet etching method mainly uses the diffusion effect (Diffusion) of strong acid or strong alkali etchant (Etchant) to chemically react with the surface molecules of the metal layer to be etched to complete the etching removal; however, since wet etching is an isotropic (Isotropic) etching, so in the etching operation, the upper surface of the metal layer is severely etched and deformed due to long-term contact with the etching solution, so that the semiconductor chip is subsequently placed on the substrate, such as figure 2 As shown, when the bonding pad 101 and the chip pad 201 are pressed together, the metal bump 210 is likely to become flat due to pressing, reducing the joint degree between the bonding pad 101 and the chip pad 201; Accelerate the etching rate and reduce the contact time of the upper surface of the metal layer with the etching solution, that is, the thickness of the metal layer must be reduced. However, this will lead to reliability problems such as easy peeling of the circuit, which will increase the difficulty of manufacturing

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