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High-frequency coil structure capable of drawing 22 silicon cores or other crystal materials

A technology of high-frequency coils and crystal materials, applied in the growth of polycrystalline materials, crystal growth, single crystal growth, etc., can solve the problems of increased number of defective products, current operation that cannot meet expectations, and large gaps in seed crystal diameters.

Active Publication Date: 2012-08-29
LUOYANG JINNUO MECHANICAL ENG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] After many experiments, I found that it is almost impossible to pull more than ten crystals at the same time due to the unreasonable layout of the existing high-frequency coils, and the number of crystals drawn at one time directly affects the input and output. Ratio, the benefit depends entirely on the number of drawn seedlings. Since the current operation around the inner hole of the existing high-frequency coil cannot reach the expected purpose, the current operation of the inner hole except the middle part and the connecting oblique opening is relatively poor. Many, the surrounding currents of the other inner holes are affected by the principle of high-frequency current operation, making the temperature of most of the inner holes much lower than the temperature of the inner holes close to or connected to the oblique opening (that is, the current takes a shortcut), due to the current The consequence of the phenomenon of taking a shortcut is that the diameter of the raised seed crystals is very different, resulting in a substantial increase in the number of defective products

Method used

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  • High-frequency coil structure capable of drawing 22 silicon cores or other crystal materials
  • High-frequency coil structure capable of drawing 22 silicon cores or other crystal materials
  • High-frequency coil structure capable of drawing 22 silicon cores or other crystal materials

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Embodiment Construction

[0015] The present invention can be explained in more detail with reference to the following examples; however, the present invention is not limited to these examples.

[0016] exist figure 1 , 2 , 3, and 4; a high-frequency coil structure that can pull twenty-two silicon cores or other crystal materials, the high-frequency coil structure is provided with a current transmission and cooling water transmission copper coil at the bottom of the high-frequency coil 3 Tube A11 and current delivery and cooling water delivery copper tube B12, the upper part 9 of the high frequency coil 3 of the high frequency coil 3 is a slope that sinks inward towards the center, and the lower part 10 of the high frequency coil 3 is provided with a Indented trapezoidal shape, 4 rings of cooling water channels are embedded in the periphery of high-frequency coil 3; the high-frequency coil structure includes shunt grooves 16 for current conduction, radial shunt grooves 14 and inner holes 8, twenty-two...

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Abstract

The invention provides a high-frequency coil structure capable of drawing 22 silicon cores or other crystal materials, and relates to the technical field of high-frequency coil. The high-frequency coil structure comprises radical splitter boxes (14) for current diversion, splitter boxes (16) and inner bores (8), wherein 8 of the 22 inner bores (8) are inner bores (8) arranged in the middle; another 7 inner bores (8) are uniformly distributed on the periphery of the middle inner bores (8) in a petal shape; and a barbell shaped inner bore (8) connecting the splitter boxes (16) between every twoinner bores is arranged between every two inner bores (8) of the 7 inner bores (8) on the periphery of the 8 inner bores (8). The high-frequency coil structure can promote current to operate around the inner bores distributed in petal shape and 14 barbell shaped inner bores uniformly under the splitting action of the splitter boxes, and lead current to be distributed on the periphery of the 22 inner bores more uniformly assisted by the splitter boxes, thereby realizing the aim that the current is distributed uniformly on the periphery of the 22 inner bores.

Description

Technical field: [0001] The invention relates to the technical field of high-frequency coils, in particular to a coil that can distribute current evenly around the inner hole, through which the silicon core or other crystal materials can be heated evenly, and twenty-two silicon cores or other crystals can be drawn at a time. Materials for high-frequency coil structures. Background technique: [0002] At present, silicon cores are used in a huge amount in China; in the existing process of producing silicon cores, monocrystalline silicon and other material crystal zone melting methods, most of them use a monocular high-frequency coil, and its working principle is as follows: When working, pass high-frequency current to the high-frequency coil, so that the high-frequency coil generates current to inductively heat the raw material rod, and the upper end of the heated raw material rod forms a melting zone, and then inserts the crystal into the melting zone, and slowly lifts the c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B13/20C30B15/14C30B29/06
Inventor 刘朝轩
Owner LUOYANG JINNUO MECHANICAL ENG