Chemical and mechanical grinding method

A chemical-mechanical and grinding method technology, used in grinding devices, grinding machine tools, electrical components, etc., can solve problems affecting operation, surface erosion or damage of semiconductor substrates, etc., to enhance grinding effect, reduce erosion or damage, and reduce reaction effect. Effect

Inactive Publication Date: 2009-11-11
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, when using the method to remove the particle defects, since the cleaning solution involved contains corrosive chemical materials such as acid and alkali, it will cause erosion or damage on the surface of the semiconductor substrate, which will still affect the subsequent operations.

Method used

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  • Chemical and mechanical grinding method
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Embodiment Construction

[0017] Although the invention will be described in more detail below with reference to the accompanying drawings, in which preferred embodiments of the invention are shown, it should be understood that those skilled in the art can modify the invention described herein and still achieve the advantageous effects of the invention. Therefore, the following description should be understood as a broad instruction for those skilled in the art, rather than as a limitation of the present invention.

[0018] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as changing from one embodiment to another in accordance with sy...

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Abstract

The invention relates to a chemical and mechanical grinding method which comprises the steps of carrying out chemical and mechanical grinding operation with grinding liquid containing grinding particles to a grinding end point, and carrying out auxiliary chemical and mechanical grinding operation with grinding liquid containing no grinding particles. Corroding or damaging degree of the substrate of a semiconductor can be reduced in the operation of eliminating defects caused by the grinding particles after the operation of the chemical and mechanical grinding.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a chemical mechanical polishing method. Background technique [0002] Chemical Mechanical Planarization (CMP) is a global surface planarization technology used in the semiconductor manufacturing process to reduce the variation of semiconductor substrate thickness and the influence of surface topography. Since CMP can accurately and uniformly planarize the semiconductor substrate to the required thickness and flatness, it has become the most widely used surface planarization technology in the semiconductor manufacturing process. [0003] In practice, the CMP operation planarizes the semiconductor substrate by adhering a polishing pad on a polishing head, then, there is a slurry between the semiconductor substrate and the polishing pad, and causing relative motion between the semiconductor substrate and the polishing pad. semiconductor substrate surface. Where...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/304B24B37/04
Inventor 李健刘俊良
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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