Memory cell of resistive random access memory (RRAM) and preparation method thereof

Abstract

The invention relates to a memory cell of a resistive random access memory (RRAM) and a preparation method thereof. The memory cell comprises an insulating substrate; a first electrode is arranged on the surface of the insulating substrate; the surface of the first electrode is provided with an intermediate layer manufactured by the materials with resistance switching properties and the surface of the intermediate layer is provided with a second electrode. The memory cell is characterized in that the intermediate layer is formed by diamond-like carbon films. Compared with the prior art, the invention has the advantages that the intermediate layer does not adopt oxide materials but diamond-like carbon films; the RRAM of such a structure shows excellent property of switching from high resistance state to low resistance state and memory property under continuous sweep driving of DC voltage; the difference between the high and low resistance states can be more than 10<2> times; in the process of continuous 100 times cycling of high and low resistance states, the resistance values of the high and low resistance states show good stability; set voltage and reset voltage show good stability; the properties show that the invention has potential application value in the field of non-volatile memory devices.

Description

A storage unit of resistive random access memory and its preparation method technical field The invention relates to the technical field of non-volatile memory, in particular to a storage unit of a resistance random access memory and a preparation method thereof. Background technique The current rapid development of digital high-tech has put forward higher requirements for the performance of existing information storage products, such as: high speed, high density, long life, low cost and low power consumption, etc. technical deficiencies. One of the weaknesses of dynamic and static memory is its volatility: information is lost in the event of a power outage, and it is susceptible to interference from electromagnetic radiation. Flash memory has technical obstacles such as slow read and write speeds and low recording density. Therefore, breakthroughs in storage materials and technologies are urgently needed to develop new-generation memory technologies. In 2000, the Univ...

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Problems solved by technology

There is still less research on other resistive random access memory (RRAM) with resistance switching materials as the intermediate layer.

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