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New method for measuring optical band gap of semiconductor film material

An optical bandgap, thin film material technology, applied in measurement devices, optical devices, phase influence characteristic measurement, etc.

Active Publication Date: 2011-09-21
ENN SOLAR ENERGY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] 1. The influence of reflection of light in the film-based system on transmission is not considered;
[0008] 2. The influence of the absorption of the substrate on the transmission is not considered;
[0009] Due to the existence of the above problems, directly using the transmittance obtained from the test to calculate the absorption coefficient of the film will inevitably introduce a large error, which will lead to a large error in the calculated optical band gap

Method used

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  • New method for measuring optical band gap of semiconductor film material
  • New method for measuring optical band gap of semiconductor film material
  • New method for measuring optical band gap of semiconductor film material

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Embodiment Construction

[0043] The present invention will be further described below through specific examples.

[0044] The operator first uses a spectrophotometer to test the reflection and transmission spectra of the blank substrate and the reflection and transmission spectra of the film-based system under different wavelengths of light. The thickness t of the substrate is a known parameter in the substrate description.

[0045] Calculate the refractive index and extinction coefficient of the substrate according to the reflection and transmission spectra of the blank substrate, and then calculate the reflectance of light at the glass-air interface and the transmission of light at the glass-air interface according to formulas (3), (4) and (5) Efficiency, the light absorption rate of the film when light penetrates the film.

[0046] Calculate the attenuation coefficients at all levels by formula (6) combined with the law of energy conservation, and substitute them into formulas (7) and (8) to calcul...

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Abstract

The invention belongs to the detection field of a semiconductor film, in particular to a method for measuring an optical band gap of a semiconductor film material. The method carries out spectrum unfolding analysis to transmission and reflection spectrum from result fitted angle, calculates accurate absorption coefficient and adopts a Tauc formula to calculate the accurate optical band gap on thebasis of the accurate absorption coefficient. The method carries out strict calculating analysis and processing to the problems in the prior art, can eliminates the error caused by the two problems of the influence of the reflection of light in a film base system to the transmission and the influence of the absorption of a substrate to the transmission and leads the degree of accuracy of the optical band gap to be greatly improved.

Description

technical field [0001] The invention belongs to the field of semiconductor thin film detection, in particular to a new method for measuring the optical band gap of semiconductor thin film materials. Background technique [0002] When light propagates in a thin film, the absorption of light by the thin film causes attenuation of light intensity. Under the condition of ignoring the interface reflection, the relationship between the absorption coefficient and transmittance of the film is: [0003] α(λ)=-lnT(λ) / d [0004] The relationship between the absorption coefficient and the optical bandgap can be expressed by the Tauc formula: [0005] Y = ( αhν ) 1 / 2 = A ( hν - E g * ) [0006] Therefore, the optical bandga...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/25G01N21/41G01B11/06
Inventor 张晓勇郭铁
Owner ENN SOLAR ENERGY