GaN-based solar-blind UV detector area array and manufacturing method thereof

Abstract

The invention discloses a GaN-based solar-blind UV detector area array and a manufacturing method thereof. The GaN-based solar-blind UV detector area array comprises a substrate, a nucleating layer grown on the substrate, an N-type ohmic contact layer grown on the nucleating layer, an active layer grown on the N-type ohmic contact layer, a P-type ohmic contact layer grown on the active layer, a P-type ohmic contact electrode grown on the P-type ohmic contact layer, a secondary metal grown on the P-type ohmic contact electrode, an N-type ohmic contact electrode grown on the N-type ohmic contact layer and a passivation layer layer deposited on two sides of the N-type ohmic contact layer, the active layer, the P-type ohmic contact layer, the P-type ohmic contact electrode, the secondary metal and the N-type ohmic contact electrode.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a GaN-based sun-blind ultraviolet detector array and a manufacturing method thereof. Background technique [0002] Ultraviolet detection technology has a wide range of applications in military and civilian applications. In the military, it has important application value in the fields of missile early warning, aircraft guidance, secret communication, and biochemical weapon detection; in civilian use, it is used in open flame detection, biomedical analysis, ozone monitoring, offshore oil monitoring, solar illumination monitoring, and public security reconnaissance. There is a demand for ultraviolet detectors in other aspects. Especially when the response band is between 200 and 280nm, due to the strong absorption of the ozone layer, the ultraviolet rays in this band cannot reach the ground, thus forming a "sun blind area (also called solar blind area)". If the ultr...

AI Technical Summary

Problems solved by technology

However, due to the difficulties in the growth of AlGaN materials with high Al composition, the fabrication of P-AlGaN ohmic contacts, and the fabrication process of the array, the actual fabrication and application of solar-blind ultraviolet detector arrays are hindered.

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