LED and production method thereof

Abstract

The invention relates to an LED and a production method thereof. The LED comprises a substrate, an LED wafer and a bonding layer, wherein the LED wafer is bonded on the substrate in a flip chip way; and the bonding layer is arranged between the substrate and the LED wafer so as to bond and electrically communicate the substrate and the LED wafer. The surface on which the substrate and the LED wafer are bonded is provided with at least one groove, the bonding layer is arranged on the groove. The bonding layer of the LED is arranged in the groove of the substrate, so that the LED wafer and the substrate are bonded firmly through the bonding layer, and the bonding layer is not prone to shift, thus ensuring that the LED wafer and the substrate have relatively good electric connection.

Description

technical field [0001] The invention relates to a light-emitting diode and a manufacturing method thereof, in particular to a flip-chip light-emitting diode and a manufacturing method thereof. Background technique [0002] Conventional methods of electrical bonding between a chip (chip) and a substrate (substrate) of a Light Emitting Diode (LED) generally include wire bonding and flip-chip bonding. see figure 1 , a chip-to-substrate flip-chip bonded light-emitting diode 50 , which includes a packaging case 51 , a substrate 52 and a chip 53 . The packaging case 51 has a receiving groove 510 , and the substrate 52 is disposed at the bottom of the receiving groove 510 . The surface of the wafer 53 having electrodes is bonded to the substrate 52 via the bonding layer 54 . The bonding layer 54 can be a bonding substance such as a metal bump (such as a gold bump) or a solder bump (Solder Bump). The electrodes of the chip 53 are bonded to the substrate 52 through the bonding la...

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Problems solved by technology

[0003] However, the bonding between the bonding layer 54 and the substrate 52 and the electrodes of the chip 53 is not strong enough, and the chip 53 is likely to be displaced relative to the substrate 52, resulting in poor electrical connection between the chip 53 and the substrate 52.

In addition, during the manufacturing process of the flip-chip LED 50 , the joint layer 54 will produce contact displacement between the substrate 52 and the chip 53 , resulting in poor joint yield.

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