Method for designing microwave and millimeter-wave spatial power synthesis amplifier

A technology of a power combiner and a design method, which is applied in the directions of waveguide-type devices, electrical components, connecting devices, etc., can solve the problems of being unsuitable for mass production, complicated design and debugging, poor suppression of high-order modes, etc. Mass production, beneficial to popularization and use, the effect of large working capacity

Inactive Publication Date: 2010-01-06
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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Problems solved by technology

The disadvantages are: narrow bandwidth, complex structure, difficult processing, three-dimensional structure, and insufficient output power
Its main disadvantages are: the working mode is complex, and the suppression of high-order modes is poor; when the number of synthesis channels increases, there is difficulty in heat dissi

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  • Method for designing microwave and millimeter-wave spatial power synthesis amplifier
  • Method for designing microwave and millimeter-wave spatial power synthesis amplifier
  • Method for designing microwave and millimeter-wave spatial power synthesis amplifier

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Embodiment Construction

[0067] Taking a 33.5GHz-35.5GHz millimeter-wave spatial power synthesis amplifier as an example, the present invention will be described in detail below, and the design steps are as follows:

[0068] 1. Selection of substrate integrated waveguide plate

[0069] In the design of substrate integrated waveguide power synthesis amplifier, the selection of waveguide plate is the key, not only because it is the carrier of the whole circuit, active devices need to be soldered on it, more importantly, the energy input and output are all in the form of The mode of the quasi-rectangular metal waveguide propagates in its medium, which directly affects key parameters such as the insertion loss of the entire power synthesis amplifier, the size of the transition, and the heat dissipation of active devices. Based on the above reasons, in this design, rogers5880 with a thickness of 0.254mm and a dielectric constant of 2.2 is selected as the substrate for making the substrate integrated wavegu...

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Abstract

The invention discloses a method for designing a microwave and millimeter-wave spatial power synthesis amplifier. The design method determines the components of the power synthesis amplifier first comprising a power divider, a power amplifier and a power combiner, and then mainly introduces the design method of the power divider according to the characteristics and requirements of the prior art. The power divider is realized mainly by the following steps: a, designing a transition section from a microstrip to a substrate integrated waveguide; b, designing a transition section from the substrate integrated waveguide to a semi-mode substrate integrated waveguide; and c, designing a transition section from the semi-mode substrate integrated waveguide to the microstrip so as to form a multi-channel power divider. Based on the realization of the power divider, the power divider can be used as the power synthesizer by reversing the power divider according to the reversibility of a passive network. Compared with the prior art, the microwave and millimeter-wave spatial power combining amplifier adopts the planar structure design completely, and has the advantages of high combining efficiency, good heat sink performance, simple processing, low cost, high yield and the like.

Description

technical field [0001] The invention relates to a design method of a power synthesizing amplifier, in particular to a design method of a microwave and millimeter wave space power synthesizing amplifier of a substrate-integrated waveguide / half-mode substrate-integrated waveguide. Background technique [0002] In the field of microwave electronics, semiconductor power devices are highly valued due to their small size, light weight, long life, and low operating voltage, and are widely used in radar, electronic warfare, military communications and other equipment. The power of a single device is difficult to meet the requirements of high-power military electronic systems due to the limitation of physical mechanism and manufacturing process. To solve this problem, solid-state power combining technology has been studied. [0003] Since the mid-1970s, researches aimed at improving the output power of microwave and millimeter-wave solid-state power sources have been carried out in ...

Claims

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Application Information

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IPC IPC(8): H01P5/12
Inventor 金海焱文光俊金雁冰肖馥林
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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